MBRM760
7A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
POWERMITEÒ3
Features
UNDER DEVELOPMENT
POWERMITEâ3
Dim
Min
4.03
6.40
Max
4.09
6.61
NEW PRODUCT
·
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Low Reverse Current
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
1
A
P
3
E
G
A
B
C
.889 NOM
1.83 NOM
1.10
5.01
4.37
.71
.36
1.73
1.14
5.17
4.43
.77
.46
1.83
.178 NOM
B
2
J
H
D
E
G
Mechanical Data
·
·
·
·
·
·
Case: POWERMITEâ3, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Moisture sensitivity: Level 1 per J-STD-020A
Polarity: See Diagram
Marking: Type Number
Weight: 0.072 grams (approx.)
M
D
C
PIN 1
PIN 2
H
J
K
C
L
PIN 3, BOTTOMSIDE
HEAT SINK
K
L
M
P
.178 NOM
Note:
Pins 1 & 2 must be electrically
connected at the printed circuit board.
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(See also figure 4)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
@ T
C
= 55°C
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
qJS
T
j
T
STG
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
Min
60
¾
¾
¾
¾
¾
¾
¾
Typ
¾
0.49
0.38
0.57
0.46
5
10
375
Max
¾
0.52
¾
0.60
¾
200
20
¾
Unit
V
V
mA
mA
pF
Test Condition
I
R
= 0.5mA
I
F
= 3.5A, T
j
= 25°C
I
F
= 3.5A, T
j
= 125°C
I
F
= 7A, T
j
= 25°C
I
F
= 7A, T
j
= 125°C
T
j
= 25°C, V
R
= 60V
T
j
= 125°C, V
R
= 60V
f = 1.0MHz, V
R
= 4.0V DC
Value
60
42
7
100
2.5
-65 to +125
-65 to +150
Unit
V
V
A
A
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Reverse Current (Note 1)
Total Capacitance
Notes:
I
R
C
T
1. Short duration test pulse used to minimize self-heating effect.
DS30357 Rev. 2 - 1
1 of 3
www.diodes.com
MBRM760
I
R
, INSTANTANEOUS FORWARD CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
100
100m
NEW PRODUCT
10m
T
j
= 125°C
10
T
j
= 125°C
1m
T
j
= 100°C
1
T
j
= 25°C
T
j
= 100°C
0.1
T
j
= 25°C
0.01
0
200
400
600
800
0
10
20
30
40
50
60
V
F
, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
10,000
f = 1MHz
C
t
, TOTAL CAPACITANCE (pF)
1000
100
0
15
30
45
60
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance vs. Reverse Voltage
UNDER DEVELOPMENT
DS30357 Rev. 2 - 1
2 of 3
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MBRM760
P
F(AV)
, AVERAGE FORWARD POWER DISSIPATION (W)
10.0
4
Note 2
3.5
3
2.5
2
1.5
1
0.5
0
0
5
8
7
9 10
3
4
6
2
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
1
Note 3
T
j
= 125°C
NEW PRODUCT
I
F
, DC FORWARD CURRENT (A)
8.0
Note 1
6.0
Note 2
4.0
Note 3
2.0
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4 DC Forward Current Derating
Notes:
1. T
A
= T
SOLDERING POINT
, R
qJS
= 2.5°C/W, R
qSA
= 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R
qJA
in range of 20-35°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
qJA
in range of
75-100°C/W.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
(Note 4)
Packaging
POWERMITEâ3
Shipping
5000/Tape & Reel
Ordering Information
Device
MBRM760-13
Marking Information
MBRM760
YYWW(K)
MBRM760 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
(K) = Factory Designator
UNDER DEVELOPMENT
POWERMITE
is a registered trademark of Microsemi Corporation.
DS30357 Rev. 2 - 1
3 of 3
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MBRM760
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