Formosa MS
MBRA120T3 thru MBRA1100T3
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
SMA-L
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.0015 ounce, 0.05 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
1.0
30
0.5
10
UNIT
A
A
mA
mA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
88
120
V
R
= V
RRM
T
A
= 125 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
SS12
SS13
SS14
SS15
SS16
SS18
S110
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
Operating
temperature
(
o
C)
(V)
MBRA120T3
MBRA130T3
MBRA140T3
MBRA150T3
MBRA160T3
MBRA180T3
MBRA1100T3
20
30
40
50
60
80
100
(V)
14
21
28
35
42
56
70
(V)
20
30
40
50
60
80
100
(V)
0.50
-55 to +125
*1 Repetitive peak reverse voltage
0.70
-55 to +150
0.85
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (MBRA120T3 thru MBRA1100T3)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
14
0
0.8
R
MB
0.6
0.4
0.2
0
0
20
40
60
80
10
3.0
1.0
M
BR
A1
50
~M
BR
A1
60
M
BR
A1
20
~M
BR
A
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
R
MB
A1
100
A1
20
4
A1
BR
~M
0
50
10
A1
BR
~M
0
120
140
160
180
200
BR
M
8
A1
0
10
A1
BR
~M
0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
24
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
18
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLT
AGE,(V)
12
6
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
Tj=75 C
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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