FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20882-2E
FLASH MEMORY
CMOS
64M (4M
×
16) BIT
MBM29LV650UE/651UE
-90/12
s
DESCRIPTION
The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The
device is designed to be programmed in system with the standard system 3.0 V V
CC
supply. 12.0 V V
PP
and
5.0 V V
CC
are not required for write or erase operations. The devices can also be reprogrammed in standard
EPROM programmers.
To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable
(OE) controls.
The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan-
dard. Commands are written to the command register using standard microprocessor write timings. Register
contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations.
Typically, each sector can be programmed and verified in about 0.5 seconds.
(Continued)
s
PRODUCT LINEUP
Part No.
V
CC
= 3.3 V
Ordering Part No.
V
CC
= 3.0 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
+0.3 V
–0.3 V
+0.6 V
–0.3 V
MBM29LV650UE/651UE
90
—
90
90
35
—
12
120
120
50
s
PACKAGES
48-pin plastic TSOP (I)
Marking Side
Marking Side
(FPT-48P-M19)
(FPT-48P-M20)
MBM29LV650UE/651UE-
90/12
(Continued)
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV650UE/651UE is erased when shipped from the
factory.
Internally generated and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically inhibits write operations on the loss of power. The end of program or erase is detected
by Data Polling of DQ
7
, by the Toggle Bit feature on DQ
6
. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
The devices electrically erase all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The words
are programmed one word at a time using the EPROM programming mechanism of hot electron injection.
s
FEATURES
• 0.23
µm
Process Technology
• Single 3.0 V read, program and erase
Minimizes system level power requirements
• Compatible with JEDEC-standards
Uses same software commands with single-power supply Flash
• Address don’t care during the command sequence
• Industry-standard pinouts
48-pin TSOP (I) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance
90 ns maximum access time
• Flexible sector architecture
One hundred twenty-eight 32K word sectors
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Hidden ROM (Hi-ROM) region
128 word of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP input pin
At V
IL
, allows protection of first or last 32K word sector, regardless of sector protection/unprotection status
At V
IH
, allows removal of protection
MBM29LV650UE:
has the function to protect the last 32K word sector (SA 127)
MBM29LV651UE:
has the function to protect the first 32K word sector (SA 0)
• ACC input pin
At V
ACC
, increases program performance
• Embedded Erase
TM
* Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded program
TM
* Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
• Low V
CC
write inhibit
≤
2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
(Continued)
2
MBM29LV650UE/651UE-
90/12
(Continued)
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
Temporary sector group unprotection via the RESET pin
This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
*: Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
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