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5082-3168

Description
Pin Diode, 35V V(BR), Silicon
CategoryDiscrete semiconductor    diode   
File Size811KB,3 Pages
ManufacturerHewlett Packard Co.
Download Datasheet Parametric View All

5082-3168 Overview

Pin Diode, 35V V(BR), Silicon

5082-3168 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerHewlett Packard Co.
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationSWITCHING
Minimum breakdown voltage35 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance2 pF
Nominal diode capacitance2 pF
Diode component materialsSILICON
Maximum diode forward resistance0.5 Ω
Diode resistance test current10 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
JESD-609 codee0
Minority carrier nominal lifetime0.07 µs
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.25 W
Certification statusNot Qualified
Reverse test voltage20 V
surface mountNO
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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