MBM29F200BC-55 datasheet, PDF - EEWORLD Datasheet

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MBM29F200BC-55: Description2M (256K X 8/128K X 16) BIT; File Size340KB，48 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MBM29F200BC-55 Overview

2M (256K X 8/128K X 16) BIT

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20867-3E

FLASH MEMORY

CMOS

2M (256K

8/128K

16) BIT

MBM29F200TC

-55/-70/-90

/MBM29F200BC

-55/-70/-90

FEATURES

• Single 5.0 V read, write, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E

PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

44-pin SOP (Package suffix: PF)

• Minimum 100,000 write/erase cycles

• High performance

55 ns maximum access time

• Sector erase architecture

One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded Erase

Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program

Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Low Vcc write inhibit

≤

3.2 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

• Hardware RESET pin

Resets internal state machine to the read mode

• Sector protection

Hardware method disables any combination of sectors from write or erase operations

• Temporary sector unprotection

Hardware method temporarily enables any combination of sectors from write on erase operations.

Embedded Erase

and Embedded Program

are trademarks of Advanced Micro Devices, Inc.

MBM29F200TC

-55/-70/-90

/MBM29F200BC

-55/-70/-90

GENERAL DESCRIPTION

The MBM29F200TC/BC is a 2M-bit, 5.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K

words of 16 bits each. The MBM29F200TC/BC is offered in a 48-pin TSOP and 44-pin SOP packages. This

device is designed to be programmed in-system with the standard system 5.0 V V

supply. 12.0 V V

is not

required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

The standard MBM29F200TC/BC offers access times 55 ns and 90 ns allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write

enable (WE), and output enable (OE) controls.

The MBM29F200TC/BC is pin and command set compatible with JEDEC standard. Commands are written to

the command register using standard microprocessor write timings. Register contents serve as input to an

internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the devices is similar

to reading from12.0 V Flash or EPROM devices.

The MBM29F200TC/BC is programmed by executing the program command sequence. This will invoke the

Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margin.

A sector is typically erased and verified in 1.0 second (if already completely preprogrammed.).

The devices also features a sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29F200TC/BC is erased when shipped from the factory.

The devices features single 5.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

, or the RY/BY output pin. Once the end of a program or erase cycle has been

completed, the device internally resets to the read mode.

Fujitsu’s Flash technology combines years of EPROM and E

PROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The MBM29F200TC/BC memory electrically erase the entire chip

or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one

byte/word at a time using the EPROM programming mechanism of hot electron injection.

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