MIG150Q201H
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG150Q201H
High Power Switching Applications
Motor Control Applications
l
Integrates inverter, brake power circuits & control circuits (IGBT drive units,
protection units for over-current, under-voltage & over-temperature) in one package.
l
The electrodes are isolated from case.
Equivalent Circuit
1
2001-05-29
MIG150Q201H
Maximum Ratings
(T
j
= 25°C)
Stage
Characteristic
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Supply voltage
Collector-emitter voltage
Collector current
Brake
Reverse voltage
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Control
Input voltage
Fault output voltage
Fault output current
Operating temperature
Module
Storage temperature range
Isolation voltage
Screw torque
AC 1 minute
M5
Condition
P-N power terminal
―
Tc = 25°C, DC
Tc = 25°C, DC
Tc = 25°C
―
P-N power terminal
―
Tc = 25°C, DC
―
Tc = 25°C, DC
Tc = 25°C
―
V
D
-GND terminal
IN-GND terminal
FO-GND (L) terminal
FO sink current
―
―
Symbol
V
CC
V
CES
I
C
I
F
P
C
T
j
V
CC
V
CES
I
C
V
R
I
F
P
C
T
j
V
D
V
IN
V
FO
I
FO
TC
T
stg
V
ISO
―
Ratings
900
1200
150
150
800
150
900
1200
50
1200
50
350
150
20
20
20
10
−20
~ +100
−40
~ +125
2500
3
Unit
V
V
A
A
W
°C
V
V
A
V
A
W
°C
V
V
V
mA
°C
°C
V
N·m
Electrical Characteristics
(T
j
= 25°C)
a.
Inverter Stage
Characteristic
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
= 1200 V
T
j
= 25°C
T
j
= 125°C
Min
―
―
―
―
―
0.8
V
CC
= 600 V, I
C
= 150 A
V
D
= 15 V, V
IN
= 3 V
0V
Inductive load
(Note 1)
―
―
―
―
Typ.
―
―
2.6
2.5
2.2
1.5
0.7
0.18
1.3
0.25
Max
1
20
3.5
―
3.0
2.1
1.4
0.25
2.2
0.5
µs
Unit
mA
Collector-emitter saturation voltage
Forward voltage
V
CE (sat)
V
F
t
on
t
c(on)
V
D
= 15 V, I
C
= 150 A T
j
= 25°C
V
IN
= 3 V
→
0 V
T
j
= 125°C
I
F
= 150 A
V
V
Switching time
t
rr
t
off
t
c(off)
2
2001-05-29
MIG150Q201H
b.
Brake Stage
(T
j
= 25°C)
Characteristic
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
= 1200V
V
D
= 15V, I
C
= 50A
V
IN
= 3V
→
0V
V
R
= 1200V
I
F
= 50A
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min
―
―
―
―
―
―
―
0.7
V
CC
= 600V, I
C
= 50A
V
D
= 15V, V
IN
= 3V
0V
Inductive load
(Note 1)
―
―
―
―
Typ.
―
―
2.7
2.5
―
―
1.4
1.4
0.85
0.42
1.9
0.4
Max
1
20
3.5
―
1
20
2.2
2.0
1.6
0.5
2.6
0.8
µs
Unit
mA
Collector-emitter saturation voltage
V
CE (sat)
V
Reverse current
Forward voltage
I
R
V
F
t
on
t
c(on)
mA
V
Switching time
t
rr
t
off
t
c(off)
c.
Control Stage
(T
j
= 25°C)
Characteristic
Symbol
I
D (H)
I
D (L)
V
IN (on)
Protection
Normal
Inverter
Brake
Inverter
Brake
I
FO (on)
I
FO (off)
OC
V
D
= 15 V
V
D
= 15 V, I
C
= 150 mA
V
D
= 15 V
Test Condition
Min
―
―
0.9
8
―
230
80
320
120
―
111
―
11.3
11.8
1
Typ.
20
80
1.1
10
―
320
110
400
150
5
118
98
12.0
12.5
2
Max
30
120
1.3
12
0.1
―
―
―
―
―
125
―
12.7
13.2
3
Unit
mA
V
mA
Control circuit
current
Input-on signal voltage
Fault output
current
Over current
protection
trip level
Short current
protection
trip level
High side
Low side
V
D
= 15 V, T
j
≤
125°C
A
SC
t
off (OC)
OT
OTr
UV
UVr
t
FO
V
D
= 15 V, T
j
≤
125°C
V
D
= 15 V
Case temperature
A
µs
°C
Over current cut-off time
Over
temperature
protection
Control supply
under voltage
protection
Fault output pulse width
Trip level
Reset level
Trip level
Reset level
―
V
D
= 15 V
V
ms
3
2001-05-29
MIG150Q201H
d.
Thermal Resistance
(T
j
= 25°C)
Characteristic
Symbol
Test Condition
Inverter IGBT
Junction to case thermal
resistance
R
th (j-c)
Inverter FRD
Brake IGBT
Brake FRD
Case to fin thermal
resistance
R
th (c-f)
Compound is applied
Min
―
―
―
―
―
Typ.
―
―
―
―
0.04
Max
0.156
0.5
0.36
1.0
―
°C / W
°C / W
Unit
Note 1: Switching time test circuit & timing chart
4
2001-05-29
MIG150Q201H
Package Dimensions: TOSHIBA 2-136A1A
Unit: mm
5
2001-05-29
京公网安备 11010802033920号
EEWORLD
