Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology the device
features
very
low
on-state
resistance. It is intended for use in
automotive and general purpose
switching applications.
BUK7615-100A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
100
75
230
175
15
UNIT
V
A
W
˚C
mΩ
PINNING - SOT404
PIN
1
2
3
mb
gate
drain (no connection
possible)
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2
1
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
20
75
53
240
230
175
UNIT
V
V
V
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
Minimum footprint, FR4
board
TYP.
-
50
MAX.
0.65
-
UNIT
K/W
K/W
January 1999
1
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
R
DS(ON)
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
V
DS
= 100 V; V
GS
= 0 V;
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A
T
j
= 175˚C
T
j
= 175˚C
MIN.
100
89
2
1
-
-
-
-
-
-
BUK7615-100A
TYP.
-
-
3.0
-
-
0.05
-
2
12.0
-
MAX.
-
-
4.0
-
4.4
10
500
100
15.0
40.5
UNIT
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
PARAMETER
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
CONDITIONS
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
-
-
-
-
-
-
-
-
-
TYP.
4500
550
305
35
85
150
70
2.5
7.5
MAX.
6000
660
400
55
125
225
100
-
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
DD
= 30 V; R
load
=1.2Ω;
V
GS
= 10 V; R
G
= 10
Ω
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
I
DR
I
DRM
V
SD
t
rr
Q
rr
PARAMETER
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
MIN.
-
I
F
= 25 A; V
GS
= 0 V
I
F
= 75 A; V
GS
= 0 V
I
F
= 75 A; -dI
F
/dt = 100 A/µs;
V
GS
= -10 V; V
R
= 30 V
-
-
-
-
-
TYP.
-
-
0.85
1.1
80
0.35
MAX.
75
240
1.2
-
-
-
UNIT
A
A
V
V
ns
µC
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 35 A; V
DD
≤
25 V;
V
GS
= 10 V; R
GS
= 50
Ω;
T
mb
= 25 ˚C
MIN.
-
TYP.
-
MAX.
120
UNIT
mJ
January 1999
2
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
BUK7615-100A
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
1
D=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0
Zth / (K/W)
P
D
t
p
D=
t
p
T
t
T
0
20
40
60
80 100
Tmb / C
120
140
160
180
0.001
0.00001
0.001
t/S
0.1
10
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
ID%
Normalised Current Derating
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
300
ID/A
250
VGS\V =
120
110
100
90
80
70
60
50
40
30
20
10
0
20.0
10.0
9.0
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
200
150
100
50
0
20
40
60
80 100
Tmb / C
120
140
160
180
0
0
2
4
VDS/V
6
8
10
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
5 V
1000
ID/A
RDS(ON) = VDS/ID
100
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
RDS(ON)/mOhm
20
tp =
1uS
100uS
1mS
19
18
17
VGS/V =
16
15
10
DC
10mS
100mS
14
13
12
5.5
6.0
6.5
7.0
8.0
10.0
0
20
40
ID/A
60
80
100
1
1
10
VDS/V
100
11
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
January 1999
3
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
BUK7615-100A
16
RDS(ON)/mOhm
3
a
Rds(on) normalised to 25degC
15
2.5
14
2
13
1.5
12
1
11
0.5
-100
-50
0
50
100
Tmb / degC
150
200
10
5
10
VGS/V
15
20
Fig.7. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(V
GS
); conditions I
D
= 25 A;
100
ID/A
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
VGS(TO) / V
max.
BUK759-60
5
80
4
typ.
60
3
min.
40
Tj/C =
20
175
25
2
1
0
0
1
2
3
VGS/V
4
5
6
7
0
-100
-50
0
50
Tj / C
100
150
200
Fig.8. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
90
gfs/S
80
70
60
50
40
30
20
10
0
0
20
40
ID/A
60
80
100
Fig.11. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Sub-Threshold Conduction
1E-01
1E-02
2%
typ
98%
1E-03
1E-04
1E-05
1E-06
0
1
2
3
4
5
Fig.9. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.12. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
January 1999
4
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
BUK7615-100A
11
10
9
8
120
110
100
90
80
70
60
Ciss
WDSS%
Thousands pF
7
6
5
4
3
2
1
0
0.01
0.1
1
VDS/V
10
Coss
Crss
100
50
40
30
20
10
0
20
40
60
80
100
120
Tmb / C
140
160
180
Fig.13. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
12
VGS/V
10
Fig.16. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 75 A
+
L
VDS =
14V
80V
VDD
8
VDS
VGS
0
RGS
T.U.T.
R 01
shunt
6
-
-ID/100
4
2
0
0
20
40
60
QG/nC
80
100
120
Fig.14. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 25 A; parameter V
DS
100
ID/A
80
Fig.17. Avalanche energy test circuit.
2
W
DSS
=
0.5
⋅
LI
D
⋅
BV
DSS
/(BV
DSS
−
V
DD
)
+
RD
VDS
Tj/C =
175
25
VDD
60
VGS
0
RG
T.U.T.
-
40
20
0
0
0.1
0.2
0.3
0.4
0.5
0.6 0.7
VSDS/V
0.8
0.9
1
1.1
Fig.15. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.18. Switching test circuit.
January 1999
5
Rev 1.000
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