F3S90 datasheet, PDF - EEWORLD Datasheet

F3S90: DescriptionPower Field-Effect Transistor, 3A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size44KB，1 Pages; ManufacturerSHINDENGEN; Websitehttps://www.shindengen.com

Download Datasheet Parametric View All

F3S90 Overview

Power Field-Effect Transistor, 3A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN

Parameter Name	Attribute value
Maker	SHINDENGEN
Parts packaging code	SFM
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum pulsed drain current (IDM)	6 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	220 ns
Maximum opening time (tons)	90 ns
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components