ISP817X,ISP827X,ISP847X3,2,1
ISP817,ISP827,ISP847-3,-2,-1
LOW INPUT CURRENT
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 3 available lead form : -
- STD
- G form
-
SMD approved to CECC 00802
l
Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The ISP817-3,-2,-1, ISP827-3,-2,-1, ISP847-
3,-2,-1 series of optically coupled isolators
consist of infrared light emitting diodes and
NPN silicon photo transistors in space efficient
dual in line plastic packages.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
Low input current 0.5mA I
F
l
High Current Transfer Ratio (50% min)
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
High BV
CEO
(70V min)
l
All electrical parameters 100% tested
l
Custom electrical selections available
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
ISP817X3,2,1
ISP817-3,2,1
2.54
7.0
6.0
1
2
Dimensions in mm
4
3
1.2
5.08
4.08
7.62
4.0
3.0
0.5
3.0
13°
Max
0.26
ISP827X3,2,1
0.5
ISP827-3,2,1
3.35
2.54
7.0
6.0
1
2
3
4
7.62
4.0
3.0
0.5
8
7
6
5
1.2
10.16
9.16
3.0
3.35
0.5
13°
Max
0.26
1
2
3
4
5
7.0
6.0
6
7
8
7.62
13°
Max
0.26
16
15
14
13
12
11
10
9
ISP847X3,2,1
ISP847-3,2,1
2.54
1.2
20.32
19.32
4.0
3.0
0.5
3.0
0.5 3.35
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92239m-AAS/A4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
10V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
70V
6V
150mW
200mW
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
MIN TYP MAX UNITS
1.2
10
10
1.4
V
V
µ
A
V
V
nA
TEST CONDITION
I
F
= 20mA
I
R
= 10
µ
A
V
R
= 10V
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 20V
0.5mA
1.0mA
0.5mA
1.0mA
I
F
,
I
F
,
I
F
,
I
F
,
0.4V
0.4V
0.4V
0.4V
V
CE
V
CE
V
CE
V
CE
Output
Collector-emitter Breakdown (BV
CEO
)
70
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
ISP817-3, ISP827-3, ISP847-3
ISP817-2, ISP827-2, ISP847-2
ISP817-1, ISP827-1, ISP847-1
Collector-emitter Saturation Voltage -3
-2
-1
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
4
Output Fall Time tf
3
70
100
50
50
100
Coupled
%
%
%
%
0.4
0.4
0.4
V
V
V
V
RMS
V
PK
Ω
µ
s
µ
s
0.5mA I
F
, 0.35mA I
C
0.5mA I
F
, 0.25mA I
C
1.0mA I
F
, 0.5mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 0.2mA,R
L
= 100
Ω
18
18
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92239m-AAS/A4
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
2.0
150
Collector current I
C
(mA)
1.6
Collector Current vs. Low
Collector-emitter Voltage
T
A
= 25°C
I
F
= 1mA
1.2
0.8
I
F
= 0.5mA
0.4
0
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
Relative current transfer ratio
50
Forward current I
F
(mA)
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
I
F
= 1mA
I
C
= 0.5mA
Current transfer ratio CTR (%)
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
0
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage V
CE
( V )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
I
F
= 1mA
V
CE
= 0.4V
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Current Transfer Ratio vs. Forward Current
120
100
80
60
40
20
0
0.1
0.2
0.5
1
2
5
Forward current I
F
(mA)
DB92239m-AAS/A4
Collector-emitter saturation voltage V
CE(SAT)
(V)
V
CE
= 0.4V
T
A
= 25 °C
Microchip MCU
京公网安备 11010802033920号
EEWORLD
