Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, TO-247
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | compliant |
| Other features | FAST |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate emitter threshold voltage maximum | 5.5 V |
| JEDEC-95 code | TO-247 |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
| VCEsat-Max | 2.9 V |
| Base Number Matches | 1 |
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