IS201, IS202, IS203, IS204,
ISD201, ISD202, ISD203, ISD204,
ISQ201, ISQ202, ISQ203, ISQ204
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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IS201
IS202
IS203
IS204
1.2
2.54
7.0
6.0
1
2
3
Dimensions in mm
6
5
4
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
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IS20* Certified to EN60950 by the
following Test Bodies :-
Nemko - Certificate No. P01102464
Fimko - Certificate No. FI18166
Semko - Reference No. 0202037/01-22
Demko - Certificate No. 311158-01
7.62
6.62
7.62
4.0
3.0
0.5
13°
Max
0.26
BSI approved - Certificate No. 8001
DESCRIPTION
The IS20*, ISD20*, ISQ20* series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
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ISD201
ISD202
ISD203
ISD204
3.0
0.5
2.54
1
7.0
6.0
2
3
4
10.16
9.16
7.62
4.0
3.0
0.5
3.35
8
7
6
5
1.2
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High BV
CEO
(70V min)
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All electrical parameter 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
3.0
13°
Max
0.26
1
2
3
4
5
7.0
6.0
6
7
8
7.62
4.0
3.0
0.5
13°
Max
0.26
16
15
14
13
12
11
10
9
ISQ201
ISQ202
ISQ203
ISQ204
2.54
0.5
3.35
7.62
1.2
20.32
19.32
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
12/3/03
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91021m-AAS/A4
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-40°C to + 125°C
Operating Temperature
-25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
IS201, ISD201, ISQ201
IS201, ISD201, ISQ201
IS202, ISD202, ISQ202
IS202, ISD202, ISQ202
IS203, ISD203, ISQ203
IS203, ISD203, ISQ203
IS204, ISD204, ISQ204
IS204, ISD204, ISQ204
Collector-emitter Saturation Voltage V
CE(SAT)
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance R
ISO
Output Turn on Time
t
ON
Output Turn off Time
t
OFF
70
6
50
MIN TYP MAX UNITS
1.2
1.65
10
V
µ
A
70V
6V
150mW
TEST CONDITION
I
F
= 50mA
V
R
= 4V
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 10V
10mA I
F
, 10V V
CE
1mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
1mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
1mA I
F
, 10V V
CE
10mA I
F
, 10V V
CE
1mA I
F
, 10V V
CE
10mA I
F
, 2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
I
F
= 10mA
V
CE
= 5V, R
L
= 75
Ω
V
V
nA
Coupled
75
10
125
30
225
50
200
100
0.2
5300
7500
5x10
10
3.0
2.5
250
450
400
0.4
%
%
%
%
%
%
%
%
V
V
RMS
V
PK
Ω
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
12/3/03
DB91021m-AAS/A4
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Relative current transfer ratio
1.5
Relative Current Transfer Ratio
vs. Ambient Temperature
150
I
F
= 10mA
V
CE
= 10V
1.0
100
0.5
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
Relative current transfer ratio
50
Forward current I
F
(mA)
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
12/3/03
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
I
F
= 1mA
V
CE
= 10V
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
5
10
20
50
Forward current I
F
(mA)
DB91021m-AAS/A4
Collector-emitter saturation voltage V
CE(SAT)
(V)
Relative current transfer ratio
I
F
= 10mA
I
C
= 2mA
V
CE
= 10V
T
A
= 25°C
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