EEWORLDEEWORLDEEWORLD

Part Number

Search

IRHM57260UPBF

Description
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size375KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

IRHM57260UPBF Overview

Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PIN

IRHM57260UPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, S-XSFM-P3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)35 A
Maximum drain-source on-resistance0.049 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-XSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)140 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD-91862E
IRHM57260
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRHM57260
IRHM53260
IRHM54260
IRHM58260
Radiation Level
100 kRads(Si)
300 kRads(Si)
600 kRads(Si)
1000 kRads(Si)
RDS(on)
0.049
0.049
0.049
0.050
I
D
35A*
35A*
35A*
35A*
TO-254AA
200V, N-CHANNEL
R
5
TECHNOLOGY
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for Single Event Effects (SEE) with
useful performance up to an LET of 80 (MeV/(mg/cm
2
)). The
combination of low R
DS(on)
and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and temperature
stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Light Weight
ESD Rating: Class 3B per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= 12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
*Current is limited by package
For Footnotes refer to the page 2.
1
35*
32
140
250
2.0
± 20
500
35
25
10
-55 to + 150
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
2016-06-30
AMD, Google, and IBM join forces to develop OpenCAPI, an open high-performance bus
[b]AMD, Google, IBM, Mellanox, Micron, Xilinx and other industry giants jointly announced that they will work together to create a new "OpenCAPI" (Open Coherent Accelerator Interface) standard, thereb...
白丁 FPGA/CPLD
Mastering Switching Power Supply Design, Second Edition
[i=s]This post was last edited by dcexpert on 2015-5-16 11:38[/i] I attended Infineon's national tour seminar on power management two days ago and was given a thick second edition of "Mastering Switch...
dcexpert Power technology
When will I receive the award?
[i=s]This post was last edited by paulhyde on 2014-9-15 03:46[/i] It has been nearly a week since the preliminary list was announced. When will everyone go to claim their prizes?Don’t forget to show t...
wstt Electronics Design Contest
I would like to ask about the learning issues of hardware basics
Can you please tell me what I need to learn to study embedded systems? Can you recommend some good reference books (except digital and analog electronics), such as those related to electronic componen...
dyqq46 Embedded System
Burn WINCE system to the board
How to use XFTP to burn the customized WinCE system to the PXA270 development board, and then how to set EBOOT to enter the WinCE system...
fang314159 Embedded System
Design of 34″ Color TV Switching Power Supply Using STR?F6656
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 20:00[/i]Abstract: This paper introduces the principle and application of Sanken's hybrid switching power supply IC STR? F6600 series. As ...
zbz0529 Mobile and portable

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 193  764  1287  1777  675  4  16  26  36  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号