IC62LV5128L
IC62LV5128LL
Document Title
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
0A
0B
History
Initial Draft
Draft Date
May 1,2001
Remark
Preliminary
1. Change for t
PWE
: 45 to 40 ns for 55 ns product
August 31,2001
: 60 to 40 ns for 70 ns product
2. Change for V
CC
: 2.2-3.6V to 2.7-3.6V
3.1 Change for I
CC
test conditiomn: V
CC
=Max. to 3V
3.2 Change for I
CC
: 30 to 25mA for 55 ns product
25 to 20mA for 70 ns porduct
20 to 15 mA for 100 ns product
4.1 Change for V
DR
Min. : 1.2 to 1.5V
4.2 Change for I
DR
test condition: V
CC
=1.2 to 1.5V and I
DR
5. Change for t
HZCE
25 to 20 ns for 55 ns product
6. Change for t
HZWE
33 to 30 ns for 70 ns product
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
LPSR012-0B 08/31/2001
1
IC62LV5128L
IC62LV5128LL
512K x 8 LOW POWER and LOW V
CC
CMOS STATIC RAM
FEATURES
• Access times of 55, 70, 100 ns
• CMOS Low power operation:
—
60 mW (typical) operation
—
3 µW (typical) standby
• Low data retention voltage: 1.5V (min.)
• Output Enable (OE) and Chip Enable
(CE) inputs for ease in applications
• TTL compatible inputs and outputs
• Fully static operation:
—
No clock or refresh reguired
• Single 2.7V-3.6V power supply
• Available in the 32-pin 8*20mm TSOP-1,
32-pin 8*13.4mm TSOP-1 and 48-pin
6*8mm TF-BGA
DESCRIPTION
The
ICSI
IC62LV5128L and IC62LV5128LL is a low voltage,
524,288 words by 8 bits, CMOS SRAM. It is fabricated using
ICSI
's low voltage, six transistor (6T), CMOS technology. The
device is targeted to satisfy the demands of the state-of-the-art
technologies such as cell phones and pagers.
When
CE
is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels. Additionally, easy memory expansion is
provided by using Chip Enable and Output Enable inputs,
CE
and
OE.
The active LOW Write Enable (
WE)
controls both
writing and reading of the memory.
The IC62LV5128L and IC62LV5128LL are available in 32-pin
8*20mm TSOP-1, 8*13.4mm TSOP-1 and 48-pin 6*8mm TF-
BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
LPSR012-0B 08/31/2001
IC62LV5128L
IC62LV5128LL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
CC
T
BIAS
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
–0.5 to Vcc + 0.5
–0.3 to +4.0
–40 to +85
–65 to +150
1
Unit
V
V
°C
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE
(1)(2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
o
C, f = 1 MHz, V
CC
= 3.0 V
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
(1)
Input LOW Voltage
(2)
Input Leakage
Output Leakage
Test Conditions
V
CC
= Min., I
OH
= –1.0 mA
V
CC
= Min., I
OL
= 2.1 mA
Min.
2.0
—
2.2
–0.2
–1
–1
Max.
—
0.4
V
CC
+ 0.3
0.4
1
1
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
Notes:
1. V
IH
(max)
=V
CC
+2.0V for pulse width less than 10ns.
2. V
IL
(min)
= –2.0V for pulse width less than 10 ns.
4
Integrated Circuit Solution Inc.
LPSR012-0B 08/31/2001
IC62LV5128L
IC62LV5128LL
IC62LV5128L POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
I
SB
1
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= 3V,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
CC
= Max.,
V
IN
= V
IH
or V
IL
,
CE
≥
V
IH
V
CC
= Max., f = 0
CE
≥
V
CC
– 0.2V,
Com.
Ind.
Com.
Ind.
Com.
Ind.
-55
Min. Max.
—
—
—
—
—
—
25
25
0.2
0.3
35
50
-70
Min. Max.
—
—
—
—
—
—
20
20
0.2
0.3
35
50
-100
Min. Max.
—
—
—
—
—
—
15
15
0.2
0.3
35
50
Unit
mA
mA
I
SB
2
µA
V
IN
≥
V
CC
– 0.2V or V
IN
≤
0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
IC62LV5128LL POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
I
SB
1
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
CC
= 3V,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
CC
= Max.,
V
IN
= V
IH
or V
IL
,
CE
≥
V
IH
V
CC
= Max., f = 0
CE
≥
V
CC
– 0.2V,
Com.
Ind.
Com.
Ind.
Com.
Ind.
-55
Min. Max.
—
—
—
—
—
—
25
25
0.2
0.3
15
20
-70
Min. Max.
—
—
—
—
—
—
20
20
0.2
0.3
15
20
-100
Min. Max.
—
—
—
—
—
—
15
15
0.3
0.3
15
20
Unit
mA
mA
I
SB
2
µA
V
IN
≥
V
CC
– 0.2V or V
IN
≤
0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc.
LPSR012-0B 08/31/2001
5
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