PTFB182557SH
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
250 W, 28 V, 1805 – 1880 MHz
Description
The PTFB182557SH is a 250-watt LDMOS FET specifically designed
for use in Doherty cellular power amplifier applications in the 1805
to 1880 MHz frequency band. Input and output matching has been
optimized for maximum performance as the peak side transistor in
Doherty amplifiers. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFB182557SH
Package H-34288G-4/2
V
DD
= 28 V, I
DQ
= 1400 mA,
ƒ
= 1842 MHz,
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-10
-20
-30
-40
-50
-60
50
Single-carrier WCDMA 3GPP Drive-up
Features
•
•
•
Broadband internal matching
Optimized for use as peak side in Doherty ampli-
fiers
Typical two-carrier WCDMA performance,
1842 MHz, 28 V, 3GPP signal, PAR = 8 dB,
10 MHz carrier spacing
- Average output power = 75 W
- Linear gain = 18.5 dB
- Efficiency = 31%
- Intermodulation distortion = –31 dBc
- Adjacent channel power= –36 dBc
Typical CW performance, 1842 MHz, 28 V
- Output power at P
1dB
= 250 W
- Efficiency = 49%
- Gain = 18 dB
Capable of handling 10:1 VSWR @28 V, 240 W
(CW) output power
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
Efficiency
ACP Up & Low (dBc)
30
ACP Up
ACP Low
20
10
0
Drain Efficiency(%)
40
•
•
•
•
•
38
43
48
53
Output Power Avg (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1350 mA, P
OUT
= 60 W avg, ƒ = 1842.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
G
ps
Min
18
31
—
Typ
19
32.5
–33
Max
—
—
–31
Unit
dB
%
dBc
h
D
ACPR
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
– DRAFT ONLY
1 of 11
Rev. 02, 2012-06-25
PTFB182557SH
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Single-carrier WCDMA 3GPP Drive-up
Two-tone Drive-up (over temperature)
V
DD
= 28 V, I
DQ
= 1400 mA,
ƒ
= 1842 MHz
V
DD
= 28 V, I
DQ
= 1400 mA,
ƒ
= 1842 MHz,
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
Peak / Average Ratio (PAR), Gain (dB)
20
16
12
8
4
0
PAR @ 0.01% CCDF
Gain
Efficiency
10
50
30
Efficiency (%) , ACP (dBc)
20
19
50
40
30
20
-20°C
+25°C
+85°C
48
53
10
0
Gain (dB)
18
17
16
Gain
-10
-30
-50
ACP Low
Efficiency
15
38
43
38
43
48
Output Power Avg (dBm)
53
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive Up
V
DD
= 28 V, I
DQ
= 1400 mA,
ƒ
= 1842 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
Two-carrier WCDMA 3GPP Drive Up
V
DD
= 28 V, I
DQ
= 1400 mA,
ƒ
= 1842 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
IMD Low
IMD Up
ACPR
Efficiency
19
45
-5
-15
50
40
30
20
10
0
-25
-35
-45
-55
17
25
16
15
Efficiency
15
38
43
48
53
5
Output Power Avg (dBm)
38
43
48
53
Output Power Avg(dBm)
Data Sheet
– DRAFT ONLY
3 of 11
Rev. 02, 2012-06-25
Drain Efficiency(%)
18
Efficiency (%)
Gain
35
IMD (dBc)
Gain (dB)
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