1N457T50A datasheet, PDF - EEWORLD Datasheet

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1N457T50A: DescriptionRectifier Diode, 1 Element, 0.2A, Silicon, DO-35; CategoryDiscrete semiconductor diode; File Size25KB，1 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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1N457T50A Overview

Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35

1N457T50A Parametric

Parameter Name	Attribute value
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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1N457/A

DO-35

Color Band Denotes Cathode

Small Signal Diode

Absolute Maximum Ratings*

Symbol

RRM

F(AV)

FSM

= 25°C unless otherwise noted

Parameter

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

Storage Temperature Range

Operating Junction Temperature

Value

200

1.0

4.0

-65 to +200

175

Units

°C

stg

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

These ratings are based on a maximum junction temperature of 200 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJA

Power Dissipation

Thermal Resistance, Junction to Ambient

= 25°C unless otherwise noted

Parameter

Value

500

300

Units

°C/W

Electrical Characteristics

Symbol

Parameter

Breakdown Voltage

Forward Voltage

Reverse Current

Total Capacitance

1N457

1N457A

Test Conditions

= 100

µA

= 20 mA

= 100 mA

= 60 V

= 60 V, T

= 150°C

= 0, f = 1.0 MHz

Min

Max

1.0

8.0

Units

µA

2002

Fairchild Semiconductor Corporation

1N457/A, Rev. A

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