1N457.T50A datasheet, PDF - EEWORLD Datasheet

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1N457.T50A: DescriptionRectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, DO-35; CategoryDiscrete semiconductor diode; File Size25KB，1 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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1N457.T50A Overview

Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, DO-35

1N457.T50A Parametric

Parameter Name	Attribute value
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	70 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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1N457/A

DO-35

Color Band Denotes Cathode

Small Signal Diode

Absolute Maximum Ratings*

Symbol

V

RRM

I

F(AV)

I

FSM

T

A

= 25°C unless otherwise noted

Parameter

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

Storage Temperature Range

Operating Junction Temperature

Value

70

200

1.0

4.0

-65 to +200

175

Units

V

mA

A

°C

T

stg

T

J

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)

These ratings are based on a maximum junction temperature of 200 degrees C.

2)

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

P

D

R

θJA

Power Dissipation

Thermal Resistance, Junction to Ambient

T

A

= 25°C unless otherwise noted

Parameter

Value

500

300

Units

mW

°C/W

Electrical Characteristics

Symbol

V

R

V

F

I

R

C

T

Parameter

Breakdown Voltage

Forward Voltage

Reverse Current

Total Capacitance

1N457

1N457A

Test Conditions

I

R

= 100

µA

I

F

= 20 mA

I

F

= 100 mA

V

R

= 60 V

V

R

= 60 V, T

A

= 150°C

V

R

= 0, f = 1.0 MHz

Min

70

Max

1.0

25

5

8.0

Units

V

nA

µA

pF

2002

Fairchild Semiconductor Corporation

1N457/A, Rev. A

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