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DH76022-70T10

Description
HF-S BAND, 5.2pF, 20V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    diode   
File Size57KB,3 Pages
ManufacturerRakon Limited
Download Datasheet Parametric View All

DH76022-70T10 Overview

HF-S BAND, 5.2pF, 20V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC PACKAGE-4

DH76022-70T10 Parametric

Parameter NameAttribute value
MakerRakon Limited
package instructionR-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage20 V
ConfigurationSEPARATE, 2 ELEMENTS
Nominal diode capacitance5.2 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO S BAND
JESD-30 codeR-PDSO-G4
Number of components2
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
TUNING VARACTOR
Plastic package, Surface Mount hyperabrupt tuning varactor
PLASTIC PACKAGE, SURFACE MOUNT HYPERABRUPT
TUNING VARACTOR
Description
This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate
a passivated mesa technology. This family is designed for a low cost medium to high volume market that
may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards.
Application
The DH76000 series hyperabrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance). Typical applications include low
noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave
frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase shifters, delay lines...
20 Volt hyperabrupt junction varactors
Characteristics @ Ta=+25° C
Reverse breakdown voltage, Vb = 20 V min. @ 10 µA
Reverse Current, Ir = 200 nA @ 16 V
Total capacitance (pF)
Ct
f = 1 MHz
f=1 MHz
Vr = 4 V
Vr = 12 V
±20 %
typ.
1.2
0.6
1.7
0.8
2.4
1.1
3.5
1.6
4.9
2.2
7.0
3.1
10.0
4.5
15.0
6.6
Temperature ranges:
Operating junction (Tj) : -55° C to +125° C
Storage : -55° C to +150° C
Tuning
ratio
Ct1V/Ct12V Ct1V/Ct20V
f = 1 MHz
f = 1 MHz
typ.
typ.
4.1
4.9
4.4
5.4
4.7
5.8
4.9
6.1
5.0
6.4
5.1
6.5
5.2
6.7
5.2
6.8
Test
conditions
Type
DH76010
DH76015
DH76022
DH76033
DH76047
DH76068
DH76100
DH76150
f = 1 MHz
Vr = 1 V
typ
2.5
3.6
5.2
8.0
11.0
16.0
23.0
35.0
f = 1 MHz
Vr = 20 V
typ.
0.5
0.7
0.9
1.3
1.7
2.4
3.5
5.1
12-36
Vol. 1
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