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5962F9562601VXC

Description
8KX8 OTPROM, CDIP28, SIDE BRAZED, CERAMIC, DIP-28
Categorystorage    storage   
File Size132KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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5962F9562601VXC Overview

8KX8 OTPROM, CDIP28, SIDE BRAZED, CERAMIC, DIP-28

5962F9562601VXC Parametric

Parameter NameAttribute value
Parts packaging codeDIP
package instructionDIP, DIP28,.6
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time65 ns
JESD-30 codeR-CDIP-T28
JESD-609 codee4
memory density65536 bit
Memory IC TypeOTP ROM
memory width8
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class V
Maximum seat height5.92 mm
Maximum standby current0.0005 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
total dose300k Rad(Si) V
width15.24 mm
Base Number Matches1
HS-6664RH
TM
Data Sheet
August 2000
File Number
3197.4
Radiation Hardened 8K x 8 CMOS PROM
The Intersil HS-6664RH is a radiation hardened 64K CMOS
PROM, organized in an 8K word by 8-bit format. The chip is
manufactured using a radiation hardened CMOS process,
and utilizes synchronous circuit design techniques to
achieve high speed performance with very low power
dissipation.
On-chip address latches are provided, allowing easy
interfacing with microprocessors that use a multiplexed
address/data bus structure. The output enable control (G)
simplifies system interfacing by allowing output data bus
control in addition to the chip enable control (E). All bits are
manufactured storing a logical “0” and can be selectively
programmed for a logical “1” at any bit location.
Applications for the HS-6664RH CMOS PROM include low
power microprocessor based instrumentation and
communications systems, remote data acquisition and
processing systems, and processor control storage.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95626. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.htm
Features
• Electrically Screened to SMD # 5962-95626
• QML Qualified per MIL-PRF-38535 Requirements
• 1.2 Micron Radiation Hardened Bulk CMOS
• Total Dose . . . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)
• Transient Output Upset. . . . . . . . . . . . . .>5 x 10
8
rad(Si)/s
• LET >100 MEV-cm
2
/mg
• Fast Access Time . . . . . . . . . . . . . . . . . . . . . . . 35ns (Typ)
• Single 5V Power Supply
• Single Pulse 10V Field Programmable
• Synchronous Operation
• On-Chip Address Latches
• Three-State Outputs
• NiCr Fuses
• Low Standby Current . . . . . . . . . . . . . . <500µA (Pre-Rad)
• Low Operating Current . . . . . . . . . . . . . . . . . . <15mA/MHz
• Military Temperature Range . . . . . . . . . . . -55
o
C to 125
o
C
Ordering Information
ORDERING NUMBER
5962F9562601QXC
5962F9562601QYC
5962F9562601VXC
5962F9562601VYC
HS1-6664RH/PROTO
HS9-6664RH/PROTO
INTERNAL
MKT. NUMBER
HS1-6664RH-8
HS9-6664RH-8
HS1-6664RH-Q
HS9-6664RH-Q
HS1-6664RH/PROTO
HS9-6664RH/PROTO
TEMP. RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright © Intersil Corporation 2000

5962F9562601VXC Related Products

5962F9562601VXC 5962F9562601QXC
Description 8KX8 OTPROM, CDIP28, SIDE BRAZED, CERAMIC, DIP-28 8KX8 OTPROM, CDIP28, SIDE BRAZED, CERAMIC, DIP-28
Parts packaging code DIP DIP
package instruction DIP, DIP28,.6 DIP, DIP28,.6
Contacts 28 28
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum access time 65 ns 65 ns
JESD-30 code R-CDIP-T28 R-CDIP-T28
JESD-609 code e4 e4
memory density 65536 bit 65536 bit
Memory IC Type OTP ROM OTP ROM
memory width 8 8
Number of functions 1 1
Number of terminals 28 28
word count 8192 words 8192 words
character code 8000 8000
Operating mode ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C
organize 8KX8 8KX8
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code DIP DIP
Encapsulate equivalent code DIP28,.6 DIP28,.6
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
power supply 5 V 5 V
Certification status Not Qualified Not Qualified
Filter level MIL-PRF-38535 Class V MIL-PRF-38535 Class Q
Maximum seat height 5.92 mm 5.92 mm
Maximum standby current 0.0005 A 0.0005 A
Maximum slew rate 0.015 mA 0.015 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V
surface mount NO NO
technology CMOS CMOS
Temperature level MILITARY MILITARY
Terminal surface GOLD GOLD
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm
Terminal location DUAL DUAL
total dose 300k Rad(Si) V 300k Rad(Si) V
width 15.24 mm 15.24 mm
Base Number Matches 1 1

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