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IRFI820-003PBF

Description
2.1A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size67KB,1 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRFI820-003PBF Overview

2.1A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET

IRFI820-003PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)2.1 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)8.4 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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Index Files: 1273  2414  677  1673  2345  26  49  14  34  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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