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IS62WV10248EFBLL-45BLI

Description
Standard SRAM, 1MX8, 45ns, CMOS, PBGA48, MINIBGA-48
Categorystorage    storage   
File Size851KB,17 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IS62WV10248EFBLL-45BLI Overview

Standard SRAM, 1MX8, 45ns, CMOS, PBGA48, MINIBGA-48

IS62WV10248EFBLL-45BLI Parametric

Parameter NameAttribute value
MakerIntegrated Silicon Solution ( ISSI )
package instructionVFBGA,
Reach Compliance Codeunknown
Maximum access time45 ns
JESD-30 codeR-PBGA-B48
length8 mm
memory density8388608 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX8
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Maximum seat height1 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.2 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width6 mm
Base Number Matches1
IS62WV10248EFALL/BLL
IS65WV10248EFALL/BLL
1Mx8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
KEY FEATURES
High-speed access time: 45ns, 55ns
CMOS low power operation
– Operating Current: 36mA (max.)
– CMOS standby Current: 5.8uA (typ.)
TTL compatible interface levels
Single power supply
–1.65V-2.2V V
DD
(IS62/65WV10248EFALL)
– 2.2V-3.6V V
DD
(IS62/65WV10248EFBLL)
Optional ERR1/ERR2 pin:
ERR1: indicates 1-bit error detection and
correction.
ERR2: indicates 2-bit error detection
Three state outputs
Industrial and Automotive temperature support
Lead-free available
JANUARY 2017
DESCRIPTION
The
ISSI
IS62/65WV10248EFALL/BLL are high-speed,
8M bit static RAMs organized as 1M words by 8 bits. It
is fabricated using
ISSI's
high-performance CMOS
technology and implemented ECC function to improve
reliability. This highly reliable process coupled with
innovative circuit design techniques including ECC,
yields high-performance and low power consumption
devices.
This highly reliable process coupled with innovative circuit
design techniques including ECC (SEC-DEC Single Error
Correcting-Double Error Detecting), yields high performan-
ce and low power consumption devices.
When CS1# is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1# is LOW, CS2 is HIGH, the
device assumes a standby mode at which the power
dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE#) controls both writing and reading of the memory.
The IS62/65WV10248EFALL/BLL are packaged in the
JEDEC standard 48-pin mini BGA (6mm x 8mm) and
44-pin TSOP (TYPE II)
FUNCTIONAL BLOCK DIAGRAM
A0 – A19
DECODER
Memory
Array
1024Kx8
ECC
Array
512Kx4
VDD
VSS
ERR1
ERR2
I/O0 – I/O7
I/O
DATA
CIRCUIT
8
13
ECC
8
5
COLUMN I/O
Column I/O
CS1#
CS2
OE#
WE#
CONTROL
CIRCUIT
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.-
www.issi.com
Rev. 0A
11/01/2016
1

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