MB84VA2105-10 datasheet, PDF - EEWORLD Datasheet

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MB84VA2105-10: Description16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM; Categorystorage storage; File Size174KB，29 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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MB84VA2105-10 Overview

16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM

MB84VA2105-10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	FUJITSU
package instruction	LBGA, BGA48,6X8,40
Reach Compliance Code	compli
Maximum access time	100 ns
Other features	SRAM IS ORGANISED AS 128K X 8
JESD-30 code	R-PBGA-B48
JESD-609 code	e0
length	14 mm
memory density	16777216 bi
Memory IC Type	MEMORY CIRCUIT
memory width	8
Mixed memory types	FLASH+SRAM
Number of functions	1
Number of terminals	48
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	2MX8
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Encapsulate equivalent code	BGA48,6X8,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/3.3 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum standby current	0.00003 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10 mm

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-50108-1E

MCP (Multi-Chip Package) FLASH MEMORY & SRAM

CMOS

16M (× 8) FLASH MEMORY &

1M (× 8) STATIC RAM

MB84VA2104

-10

/MB84VA2105

-10

FEATURES

• Power supply voltage of 2.7 to 3.6 V

• High performance

100 ns maximum access time

• Operating Temperature

–20 to +85°C

— FLASH MEMORY

• Minimum 100,000 write/erase cycles

• Sector erase architecture

One 16 K byte, two 8 K bytes, one 32 K byte, and thirty one 64 K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

MB84VA2104: Top sector

MB84VA2105: Bottom sector

• Embedded Erase

Algorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program

Algorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready-Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

• Low V

write inhibit

≤

2.5 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

Please refer to "MBM29LV160T/B" data sheet in detailed function

— SRAM

• Power dissipation

Operating : 35 mA max.

Standby : 30

µA

max.

• Power down features using CE1s and CE2s

• Data retention supply voltage: 2.0 V to 3.6 V

Embedded Erase

and Embedded Program

are trademarks of Advanced Micro Devices, Inc.

MB84VA2105-10 Related Products

	MB84VA2105-10	MB84VA2105	MB84VA2104-10	MB84VA2104
Description	16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM	16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM	16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM	16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM

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