KBPC35005/W–KBPC3510/W
Vishay Lite–On Power Semiconductor
35A Bridge Rectifier
Features
D
D
D
D
Diffused junction
Low reverse leakage current
Surge overload rating to 400A peak
Electrically isolated metal case for maximum
heat dissipation
KBPC
KBPC – W
D
Low power loss, high efficiency
D
Case to terminal isolation voltage 2500V
D
This series is UL Listed under recognized
component index, file number E95060
14 453
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
g
=Working peak reverse voltage
DC Blocking lt
=DC Bl ki voltage
Test
Conditions
Type
KBPC35005/W
KBPC3501/W
KBPC3502/W
KBPC3504/W
KBPC3506/W
KBPC3508/W
KBPC3510/W
Symbol
V
RRM
=V
RWM
V
=V
R
Value
50
100
200
400
600
800
1000
400
35
–65...+150
Unit
V
V
V
V
V
V
V
A
A
°
C
Peak forward surge current
Average forward current
T
C
=55
°
C
Junction and storage temperature range
I
FSM
I
FAV
T
j
=T
stg
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
I
2
t Rating for fusing
Diode capacitance
Thermal resistance junction to case
Test Conditions
I
F
=17.5A
T
C
=25
°
C
T
C
=125
°
C
V
R
=4V, f=1MHz
Type
Symbol Min
V
F
I
R
I
R
I
2
t
C
D
R
thJC
Typ
Max
1.2
10
1.0
664
Unit
V
m
A
mA
A
2
s
pF
K/W
300
2.7
Rev. A2, 24-Jun-98
1 (4)
KBPC35005/W–KBPC3510/W
Vishay Lite–On Power Semiconductor
Characteristics
(T
j
= 25
_
C unless otherwise specified)
I
FSM
– Peak Forward Surge Current ( A )
I
FAV
– Average Forward Current ( A )
40
Mounted on a
220 x 220 x 50 mm
AL plate heatsink
400
T
j
= 150°C
Single Half Sine–Wave
(JEDEC Method)
30
300
20
200
10
Resistive or inductive load
100
0
15745
0
1
10
Number of Cycles at 60 Hz
100
0
25
50
75
100
125
150
15747
T
amb
– Ambient Temperature (
°C
)
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
100
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
10
I
R
– Reverse Current (
m
A )
10
I
F
– Forward Current ( A )
T
j
= 100°C
1.0
1.0
0.1
T
j
= 25°C
0.1
T
j
= 25°C
I
F
Pulse Width = 300
µs
0.01
15746
0.01
0
15748
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
F
– Forward Voltage ( V )
20
40
60
80
100 120
140
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
KBPC35005/W–KBPC3510/W
Vishay Lite–On Power Semiconductor
Dimensions in mm
14481
Case: molded epoxy
Terminals: plated leads solderable per MIL–STD–202, method 208
Polarity: symbols marked on case
Approx. weight: KBPC 31.6 grams,
KBPC–W 28.5 grams
Mounting: through hole for #10 screw
Mounting torque: 8.0 Inch–pounds maximum
Mounting position: any
Marking: type number
Rev. A2, 24-Jun-98
3 (4)
KBPC35005/W–KBPC3510/W
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
Embedded System
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