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JANTXV2N3996

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 4 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size32KB,1 Pages
ManufacturerDefense Logistics Agency
Download Datasheet Parametric View All

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JANTXV2N3996 Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 4 Pin,

JANTXV2N3996 Parametric

Parameter NameAttribute value
MakerDefense Logistics Agency
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeO-MUPM-X4
Number of components1
Number of terminals4
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Certification statusQualified
GuidelineMIL-19500/374D
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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