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2SC2713-GR,LPASF(T

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size316KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC2713-GR,LPASF(T Overview

Small Signal Bipolar Transistor

2SC2713-GR,LPASF(T Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.15 W
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.3 V
Base Number Matches1
2SC2713
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2713
Audio Frequency General Purpose Amplifier Applications
High voltage: V
CEO
= 120 V
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
High h
FE:
h
FE
= 200 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1163
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
120
120
5
100
20
150
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-59
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3F1A
reliability significantly even if the operating conditions (i.e. operating
Weight: 0.012 g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
Test Condition
V
CB
=
120 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
Min
200
Typ.
100
3.0
1.0
Max
0.1
0.1
700
0.3
10
V
MHz
pF
dB
Unit
μA
μA
h
FE
V
CE
=
6 V, I
C
=
2 mA
(Note)
V
CE (sat)
f
T
C
ob
NF
I
C
=
10 mA, I
B
=
1 mA
V
CE
=
6 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
6 V, I
C
=
0.1 mA
f
=
1 kHz, R
G
=
10 kΩ
Note: h
FE
classification GR (G): 200~400, BL (L): 350~700, (
) marking symbol
Marking
Start of commercial production
1982-10
1
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