DG9262/9263
New Product
Vishay Siliconix
Low-Voltage Dual SPST Analog Switch
FEATURES
D
D
D
D
D
D
D
D
D
Low Voltage Operation (+2.7 to +5 V)
Low On-Resistance - r
DS(on
): 40
W
Fast Switching - t
ON
: 35 ns, t
OFF
: 20 ns
Low Leakage - I
COM(on)
: 200-pA max
Low Charge Injection - Q
INJ
: 1 pC
Low Power Consumption
TTL/CMOS Compatible
ESD Protection > 2000 V (Method 3015.7)
Available in MSOP-8 and SOIC-8
BENEFITS
D
D
D
D
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
APPLICATIONS
D
D
D
D
D
D
D
Battery Operated Systems
Portable Test Equipment
Sample and Hold Circuits
Cellular Phones
Communication Systems
Military Radio
PBX, PABX Guidance and Control
Systems
DESCRIPTION
The DG9262/9263 is a single-pole/single-throw monolithic
CMOS analog device designed for high performance
switching of analog signals. Combining low power, high speed
(t
ON
: 35 ns, t
OFF
: 20 ns), low on-resistance (r
DS(on)
: 40
W)
and small physical size, the DG9262/9263 is ideal for portable
and battery powered applications requiring high performance
and efficient use of board space.
The DG9262/9263 is built on Vishay Siliconix’s low voltage
BCD-15 process. Minimum ESD protection, per Method 3015.7 is
2000 V. An epitaxial layer prevents latchup. Break-before -make is
guaranteed for DG9262/9263.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NC
1
COM
1
IN
2
GND
1
2
3
4
8
7
6
5
V+
IN
1
COM
2
NC
2
NO
1
COM
1
IN
2
GND
1
2
3
4
8
7
6
5
V+
IN
1
COM
2
NO
2
Top View
Top View
TRUTH TABLE - DG9262
Logic
0
1
Logic “0”
v0.8
V
Logic “1”w 2.4 V
TRUTH TABLE - DG9263
Logic
0
1
Logic “0”
v0.8
V
Logic “1”w 2.4 V
Switch
On
Off
Switch
Off
On
ORDERING INFORMATION
Temp Range
Package
SOIC-8
-40 to 85°C
°
MSOP-8
Part Number
DG9262DY
DG9263DY
DG9262DQ
DG9263DQ
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
1
DG9262/9263
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V
IN, COM, NC, NO
a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . .
"20
mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"40
mA
(Pulsed at 1ms, 10% duty cycle)
ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C
Power Dissipation (Packages)
b
8-Pin Narrow Body SOIC
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
New Product
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
r
DS(on)
Match
d
r
DS(on)
Flatness
d
NO or NC Off Leakage Current
g
COM Off Leakage Current
g
Channel-On Leakage Current
g
V
ANALOG
r
DS(on)
Dr
DS(on)
r
DS(on)
Flatness
I
NO/NC(off)
I
COM(off)
I
COM(on)
V
NO
or V
NC
= 1.5 V, V+ = 2.7 V
I
COM
= 5 mA
V
NO
or V
NC
= 1.5 V
V
NO
or V
NC
= 1 and 2 V
V
NO
or V
NC
= 1 V / 2 V, V
COM
= 2 V / 1 V
V
COM
= 1 V / 2 V, V
NO
or V
NC
= 2 V / 1 V
V
COM
= V
NO
or V
NC
= 1 V / 2 V
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
-100
–5000
-100
–5000
-200
–10000
0
50
0.4
4
5
5
10
3
80
140
2
8
100
5000
100
5000
200
10000
pA
W
V
D Suffix
–40 to 85_C
Symbol
V+ = 3 V,
"10%,
V
IN
= 0.8 or 2.4 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Digital Control
Input Current
I
INL
or I
INH
Full
1
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
d
Off-Isolation
Crosstalk
NC and NO Capacitance
Channel-On Capacitance
Com-Off Capacitance
t
ON
V
NO
or V
NC
= 1.5 V
t
OFF
Q
INJ
OIRR
X
TALK
C
(off)
C
COM(on)
C
COM(off)
f = 1 MHz
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W
R
L
= 50
W
C
L
= 5 pF, f = 1 MHz
W,
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
50
20
1
–74
–90
7
20
13
pF
dB
120
200
50
120
5
ns
pC
Power Supply
Power Supply Range
Power Supply Current
Notes:
a.
b.
c.
d.
e.
f.
g.
Room = 25°C, Full = as determined by the operating suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for design aid only, not guaranteed nor subject to production testing.
Guarantee by design, nor subjected to production test.
V
IN
= input voltage to perform proper function.
Difference of min and max values.
Guaranteed by 5-V leakage test, not production tested.
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
V+
I+
V+ = 3.3 V, V
IN
= 0 or 3.3 V
2.7
12
1
V
mA
www.vishay.com
2
DG9262/9263
New Product
SPECIFICATIONS (V+ = 5 V)
Vishay Siliconix
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
r
DS(on)
Match
d
r
DS(on)
Flatness
f
NO or NC Off Leakage Current
COM Off Leakage Current
Channel-On Leakage Current
V
ANALOG
r
DS(on)
Dr
DS(on)
r
DS(on)
Flatness
I
NO/NC(off)
I
COM(off)
I
COM(on)
V
NO
or V
NC
= 3.5 V, V+ = 4.5 V
I
COM
= 5 mA
V
NO
or V
NC
= 3.5 V
V
NO
or V
NC
= 1, 2, and 3 V
V
NO
or V
NC
= 1 V / 4 V, V
COM
= 4 V / 1 V
V
COM
= 1 V / 4 V, V
NO
or V
NC
= 4 V / 1 V
V
COM
= V
NO
or V
NC
= 1 V / 4 V
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
-100
–5000
-100
–5000
-200
–10000
0
D Suffix
–40 to 85_C
Symbol
V+ = 5 V,
"10%,
V
IN
= 0.8 or 2.4 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
5
30
0.4
2
10
10
60
75
2
6
100
5000
100
5000
200
10000
V
W
pA
Digital Control
Input Current
I
INL
or I
INH
Full
1
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
d
Off-Isolation
Crosstalk
NC and NO Capacitance
Channel-On Capacitance
Com-Off Capacitance
t
ON
V
NO
or V
NC
= 3.0 V
t
OFF
Q
INJ
OIRR
X
TALK
C
(off)
C
D(on)
C
D(off)
f = 1 MHz
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W
R
L
= 50
W
C
L
= 5 pF, f = 1 MHz
W,
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
35
20
2
–74
–90
7
20
13
pF
dB
75
150
50
100
5
ns
pC
Power Supply
Power Supply Range
Power Supply Current
V+
I+
V+ = 5.5 V, V
IN
= 0 or 5.5 V
2.7
12
1
V
mA
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for design aid only, not guaranteed nor subject to production testing.
Guarantee by design, nor subjected to production test.
V
IN
= input voltage to perform proper function.
Difference of min and max values.
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
3
DG9262/9263
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection
2.0
1.5
1.0
0.5
Q
INJ
(pC)
0.0
–0.5
–1.0
–1.5
–2.0
0.0
I
SUPPLY
(
m
A)
V+ = 3 V
3000
2500
2000
1500
1000
500
0
V+ = 3 V
–500
0.5
1.0
1.5
V
COM
2.0
2.5
3.0
0
1
2
V
IN
3
4
5
V+ = 5 V
Supply Current vs. V
IN
Leakage Current vs. Temperature
10 nA
–40
Off-Isolation vs. Frequency
1 nA
OFF-Isolation (dB)
125
I
COM(off)
(A)
–60
100 pA
I
COM(off)
10 pA
I
COM(on)
–80
–100
1 pA
–120
0.1 pA
25
45
65
85
105
–140
0.001 M
0.01 M
0.1 M
Frequency (Hz)
1M
10 M
Temperature (_C)
Off-Leakage vs. Voltage @ 25_C
2.5
2.0
1.5
60
1.0
I
OFF
(pA)
0.5
0.0
–0.5
–1.0
20
–1.5
–2.0
–2.5
0
1
2
V
COM
3
4
5
0
0
1
I
NO/NC
r
DS(on)
(
W
)
I
COM
V+ = 5 V
80
r
DS
vs. V
COM
V+ = 3 V
40
V+ = 5 V
2
V
COM
3
4
5
www.vishay.com
4
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
DG9262/9263
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS
vs. V
COM
80
70
V+ = 3 V
60
60
r
DS(on)
(
W
)
85_C
50
25_C
40
40_C
t
ON
/ t
OFF
(nsec)
40
30
t
OFF
20
10
0
0.0
0
–60
t
ON
Vishay Siliconix
Switching Time vs. Temperature
20
0.5
1.0
1.5
V
COM
2.0
2.5
3.0
–30
0
30
60
90
120
Temperature (_C)
t
ON
/t
OFF
vs. Power Supply Voltage
120
Input Switching Point vs. Power Supply Voltage
2.25
2.00
1.75
100
T (nsec)
V
IN
(sw)
t
ON
t
OFF
2.0
2.5
3.0
V+
3.5
4.0
4.5
5.0
80
1.50
1.25
1.00
60
40
20
0.75
0.50
2
3
4
V+
5
6
0
1.5
Document Number: 70862
S-05298—Rev. B, 17-Dec-01
www.vishay.com
5