SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
KTC8550S
EPITAXIAL PLANAR PNP TRANSISTOR
L
E
B
L
FEATURE
・Complementary
to KTC8050S.
A
G
・Suffix
U
: Qualified to AEC-Q101.
ex) KTC8550S-D-RTK/PU
2
H
3
1
Q
MAXIMUM RATING (Ta=25℃)
C
N
P
P
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
RATING
-35
-30
-5
-800
800
350
150
-55½150
UNIT
V
V
V
mA
mA
mW
℃
℃
2. BASE
3. COLLECTOR
M
K
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
1. EMITTER
SOT-23
* P
C
: Package Mounted On 99.5% Alumina (10×8×0.6㎜)
Marking
h
FE
Rank
Lot No.
Type Name
BL
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
C : 100½200,
SYMBOL
I
CBO
V
(BR)CBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
D : 150½300
TEST CONDITION
V
CB
=-15V, I
E
=0
I
C
=-0.5mA, I
E
=0
I
C
=-1mA, I
B
=0
V
CE
=-1V, I
C
=-50mA
V
CE
=-1V, I
C
=-350mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-5V, I
C
=-10mA
V
CB
=-10V, f=1MHz, I
E
=0
MIN.
-
-35
-30
100
60
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
19
MAX.
-50
-
-
300
-
-0.5
-1.2
-
-
V
V
MHz
pF
UNIT
nA
V
V
2018. 04. 10
Revision No : 2
J
D
1/2
KTC8550S
I
C
- V
CE
-1k
COLLECTOR CURRENT I
C
(mA)
-800
-600
-400
-200
0
COMMON EMITTER
Ta=25 C
-8
-7
-6
-5
-4
-3
-2
I
B
=-1mA
0
h
FE
- I
C
2k
DC CURRENT GAIN h
FE
1k
500
300
100
50
30
10
-1
-3
-10
-30
-100
-300
-1k
COMMON EMITTER
V
CE
=-1V
Ta=100 C
Ta=25 C
Ta=-25 C
0
-1
-2
-3
-4
-5
-6
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
V
CE(sat)
(V)
COLLECTOR CURRENT I
C
(mA)
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
-0.01
-1
-3
-10
-30
-100
-300
-1k
COLLECTOR CURRENT I
C
(mA)
Ta=100 C
Ta=25 C
Ta=-25 C
COMMON EMITTER
I
C
/I
B
=25
I
C
- V
BE
-1k
-500
-300
-100
Ta=
25 C
COMMON
EMITTER
V
CE
=-1V
100
-10
-5
-3
-1
-0.2
-0.4
-0.6
Ta=
-2
-50
-30
C
Ta=
5 C
-0.8
-1.0
BASE-EMITTER VOLTAGE V
BE
(V)
Pc - Ta
COLLECTOR POWER DISSIPATION
Pc (mW)
500
400
300
200
100
0
1
MOUNTED ON 99.5%
1
ALUMINA 10x8x0.6mm
2
Ta=25 C
2
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2018. 04. 10
Revision No : 2
2/2
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