54AC725DM datasheet, PDF - EEWORLD Datasheet

54AC725DM: DescriptionFIFO, 512X9, Asynchronous, CMOS, CDIP28, CERAMIC, DIP-28; Categorystorage storage; File Size367KB，16 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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54AC725DM Overview

FIFO, 512X9, Asynchronous, CMOS, CDIP28, CERAMIC, DIP-28

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	DIP, DIP28,.6
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	CAN ALSO OPERATE AT 4.5V TO 5.5V
period time	28.5 ns
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
memory density	4608 bit
Memory IC Type	OTHER FIFO
memory width	9
Number of functions	1
Number of terminals	28
word count	512 words
character code	512
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512X9
Exportable	NO
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3/5 V
Certification status	Not Qualified
Maximum standby current	0.01 A
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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