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FSS230D1

Description
Power Field-Effect Transistor, 8A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
CategoryDiscrete semiconductor    The transistor   
File Size119KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

FSS230D1 Overview

Power Field-Effect Transistor, 8A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

FSS230D1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.44 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-257AA
JESD-30 codeR-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)235
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FSS230D, FSS230R
December 2001
8A, 200V, 0.440 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Fairchild Corporation
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard-
ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Fairchild portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications exposed
to radiation environments such as switching regulation,
switching converters, motor drives, relay drivers and drivers
for high-power bipolar switching transistors requiring high
speed and low gate drive power. This type can be operated
directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Fairchild for any desired deviations
from the data sheet.
Features
• 8A, 200V, r
DS(ON)
= 0.440
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL
Commercial
TXV
Commercial
TXV
Space
PART NUMBER/BRAND
FSS230D1
FSS230D3
FSS230R1
FSS230R3
FSS230R4
Symbol
D
G
Formerly available as type TA17637.
S
Package
TO-257AA
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
©2001 Fairchild Semiconductor Corporation
FSS230D, FSS230R Rev. B

FSS230D1 Related Products

FSS230D1 FSS230R4 FSS230R3
Description Power Field-Effect Transistor, 8A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA Power Field-Effect Transistor, 8A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA Power Field-Effect Transistor, 8A I(D), 200V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
package instruction FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V 200 V
Maximum drain current (ID) 8 A 8 A 8 A
Maximum drain-source on-resistance 0.44 Ω 0.44 Ω 0.44 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-257AA TO-257AA TO-257AA
JESD-30 code R-MSFM-P3 R-MSFM-P3 R-MSFM-P3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material METAL METAL METAL
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 235 235 235
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 24 A 24 A 24 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon )
Base Number Matches 1 1 -
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