IS62WV5128ALL
IS62WV5128BLL
512K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 55ns, 70ns
• CMOS low power operation
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V V
CC
(62WV5128ALL)
– 2.5V--3.6V V
CC
(62WV5128BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
ISSI
DESCRIPTION
®
PRELIMINARY INFORMATION
MARCH 2002
The
ISSI
IS62WV5128ALL / IS62WV5128BLL are high-
speed, 4M bit static RAMs organized as 512K words by 8
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory.
The IS62WV5128ALL and IS62WV5128BLL are packged in
the JEDEC standard 32-pin TSOP (TYPE I), 32-pin sTSOP
(TYPE I), 32-pin TSOP (TypeII), and 36-pin mini BGA.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2
CS1
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes this specification herein and it products at any time without notice. ISSI assumes no responsibility or liability arising out of the application or use of any information,
product or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
© Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION Rev. 00A
03/11/02
1
IS62WV5128ALL,
IS62WV5128BLL
ISSI
IS62WV5128BLL
2.5V - 3.6V
2.5V - 3.6V
1.65V - 2.2V
1.65V - 2.2V
®
OPERATING RANGE (Vcc)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
IS62WV5128ALL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
V
CC
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Vcc Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to Vcc+0.3
–40 to +85
–0.2 to +3.8
–65 to +150
1.0
Unit
V
°C
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
CC
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Test Conditions
I
OH
= -0.1 mA
I
OH
= -1 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
Vcc
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–1
–1
Max.
—
—
0.2
0.4
V
CC
+ 0.2
V
CC
+ 0.3
0.4
0.6
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION Rev. 00A
03/11/02
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