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DCR1003SF14

Description
Silicon Controlled Rectifier, 1200000mA I(T), 1400V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size114KB,8 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
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DCR1003SF14 Overview

Silicon Controlled Rectifier, 1200000mA I(T), 1400V V(DRM),

DCR1003SF14 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerDynex
package instruction,
Contacts4
Reach Compliance Codeunknown
Nominal circuit commutation break time110 µs
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3.5 V
Maximum holding current230 mA
Maximum leakage current100 mA
On-state non-repetitive peak current21000 A
Maximum on-state current1200000 A
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Off-state repetitive peak voltage1400 V
surface mountNO
Trigger device typeSCR
Base Number Matches1
DCR1003SF
DCR1003SF
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4548-3.2
DS4645-6.0 July 2001
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Turn-on Losses
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dI/dt
1800V
1511A
26250A
1000A/
µ
s
APPLICATIONS
s
High Power Converters
s
High Voltage Power Supplies
s
DC Motor Control
dVdt* 1000V/
µ
s
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
1800
1700
1600
1500
1400
Conditions
DCR1003SF18
DCR1003SF17
DCR1003SF16
DCR1003SF15
DCR1003SF14
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 100mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1003SF18
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
1/8
www.dynexsemi.com

DCR1003SF14 Related Products

DCR1003SF14 DCR1003SF18 DCR1003SF15 DCR1003SF16 DBP-M987-01-1802-JG
Description Silicon Controlled Rectifier, 1200000mA I(T), 1400V V(DRM), Silicon Controlled Rectifier, 1200000mA I(T), 1800V V(DRM), Silicon Controlled Rectifier, 1200000mA I(T), 1500V V(DRM), Silicon Controlled Rectifier, 1200000mA I(T), 1600V V(DRM), Array/Network Resistor, Bussed, Tantalum Nitride/nickel Chrome, 0.1W, 18000ohm, 100V, 5% +/-Tol, -100,100ppm/Cel, 7726,
Reach Compliance Code unknown unknown unknown unknown compliant
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Is it lead-free? Lead free Lead free Lead free Lead free -
Maker Dynex Dynex Dynex Dynex -
Contacts 4 4 4 4 -
Nominal circuit commutation break time 110 µs 110 µs 110 µs 110 µs -
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us 1000 V/us -
Maximum DC gate trigger current 200 mA 200 mA 200 mA 200 mA -
Maximum DC gate trigger voltage 3.5 V 3.5 V 3.5 V 3.5 V -
Maximum holding current 230 mA 230 mA 230 mA 230 mA -
Maximum leakage current 100 mA 100 mA 100 mA 100 mA -
On-state non-repetitive peak current 21000 A 21000 A 21000 A 21000 A -
Maximum on-state current 1200000 A 1200000 A 1200000 A 1200000 A -
Off-state repetitive peak voltage 1400 V 1800 V 1500 V 1600 V -
surface mount NO NO NO NO -
Trigger device type SCR SCR SCR SCR -
Base Number Matches 1 1 1 1 -
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