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3SK222-V21-A

Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size53KB,6 Pages
ManufacturerNEC Electronics
Environmental Compliance
Download Datasheet Parametric View All

3SK222-V21-A Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

3SK222-V21-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNEC Electronics
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
ConfigurationSINGLE
Maximum drain current (ID)0.025 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.03 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee6
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)21 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK222
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• The Characteristic of Cross-Modulation is good.
CM = 92 dB
µ
TYP. @ f = 200 MHz, G
R
= –30 dB
PACKAGE DIMENSIONS
(Unit: mm)
0.4
+0.1
–0.05
1.5
+0.2
–0.1
2.8
+0.2
–0.3
• Low Noise Figure:
• High Power Gain:
• Enhancement Type.
NF1 = 1.2 dB TYP. (f = 200 MHz)
NF2 = 1.0 dB TYP. (f = 55 MHz)
G
PS
= 23 dB TYP. (f = 200 MHz)
(1.8)
0.85 0.95
2.9±0.2
2
• Automatically Mounting:
• Small Package:
Embossed Type Taping
4 Pins Mini Mold
1
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1
R
L
10 kΩ
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
±8
18
(±10)
*1
18
18
25
200
125
–55 to +125
±8
(±10)
*1
V
1.1
0.8
V
V
V
V
mA
mW
°C
°C
+0.2
–0.1
0.4
+0.1
–0.05
0.16
+0.1
–0.06
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
0.6
+0.1
–0.05
0 to 0.1
1.
2.
3.
4.
Source
Drain
Gate 2
Gate 1
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10574EJ2V0DS00 (2nd edition)
(Previous No. TD-2267)
Date Published August 1995 P
Printed in Japan
4
(1.9)
• Suitable for use as RF amplifier in FM tuner and VHF TV tuner.
3
0.4
+0.1
–0.05
©
1989
1993
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