BCW89R datasheet, PDF - EEWORLD Datasheet

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BCW89R: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size173KB，2 Pages; ManufacturerDiodes Incorporated

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BCW89R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCW89R Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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SOT23 PNP PLANAR

SMALL SIGNAL TRANSISTORS

ISSUE 2 FEBRUARY 1995

PARTMARKING DETAILS

BCW89

BCW89R

H3

H6

BCW89

C

B

E

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage (I

C

=-2mA)

Emitter-Base Voltage

Collector Current

Peak Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

Collector-Base Cut-Off

Current

Base-Emitter Voltage

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Collector Capacitance

Noise Figure

SYMBOL MIN.

I

CBO

V

BE

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

TC

N

-600

-80

-150

-720

-810

120

90

150

7

10

260

MHz

pF

dB

SYMBOL

V

CBO

V

CES

V

CEO

V

EBO

I

C

I

CM

P

tot

T

j

:T

stg

VALUE

-80

-60

-5

-100

-200

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

TYP.

MAX. UNIT CONDITIONS.

-100

-10

-750

-300

µ

A

nA

I

E

=0, V

CB

=-20V

I

E

=0, V

CB

=-20V, T

j

=100°C

I

C

=-2.0mA, V

CE

=-5.0V

I

C

=-10mA, I

B

=-0.5mA

I

C

=-50mA, I

B

=-2.5mA

I

C

=-10mA, I

B

=-0.5mA

I

C

=-50mA, I

B

=-2.5mA

I

C

=-10

µ

A, V

CE

=-5.0V

I

C

=-2.0mA, V

CE

=-5.0V

I

C

=-10mA, V

CE

=-5.0V

f =35MHz

I

E

=I

e

=0, V

CB

=-10V

f =1MHz

I

C

=-200

µ

A, V

CE

=-5.0V

R

S

=2.0K

Ω

, f =1KHz

B =200Hz

mV

Spice parameter data is available upon request for this device

PAGE NO

BCW89R Related Products

	BCW89R
Description	Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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