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GT28F160B3T90

Description
Flash, 1MX16, 90ns, PBGA48, CSP, MICRO, BGA-48
Categorystorage    storage   
File Size305KB,58 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

GT28F160B3T90 Overview

Flash, 1MX16, 90ns, PBGA48, CSP, MICRO, BGA-48

GT28F160B3T90 Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionCSP, MICRO, BGA-48
Contacts48
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time90 ns
Other featuresUSER-SELECTABLE 12V VPP; TOP BOOT BLOCK
startup blockTOP
JESD-30 codeR-PBGA-B48
length13 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
typeNOR TYPE
width10 mm
Base Number Matches1
3 Volt Advanced Boot Block Flash
Memory
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Preliminary Datasheet
Product Features
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Flexible SmartVoltage Technology
— 2.7 V–3.6 V Read/Program/Erase
— 12 V V
PP
Fast Production Programming
2.7 V or 1.65 V I/O Option
— Reduces Overall System Power
High Performance
— 2.7 V–3.6 V: 70 ns Max Access Time
Optimized Block Sizes
— Eight 8-KB Blocks for Data,Top or
Bottom Locations
— Up to One Hundred Twenty-Seven
64-KB Blocks for Code
Block Locking
— V
CC
-Level Control through WP#
Low Power Consumption
— 9 mA Typical Read Current
Absolute Hardware-Protection
— V
PP
= GND Option
— V
CC
Lockout Voltage
Extended Temperature Operation
— –40 °C to +85 °C
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Flash Data Integrator Software
— Flash Memory Manager
— System Interrupt Manager
— Supports Parameter Storage, Streaming
Data (e.g., Voice)
Automated Program and Block Erase
— Status Registers
Extended Cycling Capability
— Minimum 100,000 Block Erase Cycles
Guaranteed
Automatic Power Savings Feature
— Typical I
CCS
after Bus Inactivity
Standard Surface Mount Packaging
— 48-Ball
µBGA*
Package
— 48-Ball VF BGA Package
— 48-Lead TSOP Package
— 40-Lead TSOP Package
Footprint Upgradeable
— Upgrade Path for 4-, 8-, 16-, 32- and
64-Mbit Densities
ETOX™ VII (0.18
µ)
Flash Technology
x8 not recommended for new designs
The 3 Volt Advanced Boot Block flash memory, manufactured on Intel’s latest 0.18 micron
technology, represents a feature-rich solution at overall lower system cost. 3 Volt Advanced
Boot Block flash memory devices incorporate low voltage capability (2.7 V read, program and
erase) with high-speed, low-power operation. Several new features have been added, including
the ability to drive the I/O at 1.65 V, which significantly reduces system active power and
interfaces to 1.65 V controllers. A new blocking scheme enables code and data storage within a
single device. Add to this the Intel-developed Flash Data Integrator (FDI) software, and you
have a cost-effective, monolithic code plus data storage solution. 3 Volt Advanced Boot Block
flash memory products will be available in 40-lead and 48-lead TSOP and 48-ball µBGA* and
48-ball VF BGA packages. Additional information on this product family can be obtained by
accessing Intel’s website at: http://www.intel.com/design/flash.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290580-011
April 2000
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