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BSM400GA120DN2S

Description
Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size49KB,1 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

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BSM400GA120DN2S Overview

Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel

BSM400GA120DN2S Parametric

Parameter NameAttribute value
MakerSIEMENS
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)550 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)120 ns
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-CUFM-X5
Number of components1
Number of terminals5
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment2700 W
Certification statusNot Qualified
Maximum rise time (tr)220 ns
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsGENERAL PURPOSE
Transistor component materialsSILICON
Maximum off time (toff)800 ns
Nominal off time (toff)550 ns
Maximum opening time (tons)200 ns
Nominal on time (ton)100 ns
VCEsat-Max3 V
Base Number Matches1
BSM 400 GA 120 DN2 S
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
Semiconductor Group
1
Jan-10-1997
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