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Type
BSZ076N06NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Halogen-free according to IEC61249-2-21
Type
BSZ076N06NS3 G
Product Summary
V
DS
R
DS(on),max
I
D
60
7.6
20
V
mΩ
A
Package
Marking
PG-TSDSON-8
076N06N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
2)
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
C
=25 °C,
R
thJA
=50K/W J41
3)
Pulsed drain current
4)
Avalanche energy, single pulse
5)
Gate source voltage
1)
2)
3)
Value
20
20
Unit
A
14
80
118
±20
mJ
V
I
D,pulse
E
AS
V
GS
T
C
=25 °C
I
D
=20 A,
R
GS
=25
Ω
J-STD20 and JESD22
Current is limited by bondwire; with an
R
thJC
=1.8 K/W the chip is able to carry 75A.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
See figure 3 for more detailed information
5)
See figure 13 for more detailed information
Rev.2.4
page 1
2009-11-11
BSZ076N06NS3 G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=60 K/W
3)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
69
2.1
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R
thJC
R
thJA
minimal footprint
6 cm² cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=35 µA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
GSS
R
DS(on)
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=20 A
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=20 A
60
2
-
-
3
0.1
-
4
1
µA
V
-
-
-
-
-
-
1.8
-
60
K/W
-
-
-
-
20
10
10
6.1
1
39
100
100
7.6
-
-
nA
mΩ
Ω
S
Rev.2.4
page 2
2009-11-11
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