5962-8868101XA datasheet, PDF - EEWORLD Datasheet

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5962-8868101XA: DescriptionStandard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28; Categorystorage storage; File Size296KB，8 Pages; ManufacturerLOGIC Devices; Websitehttp://www.logicdevices.com/

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5962-8868101XA Overview

Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28

5962-8868101XA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LOGIC Devices
Parts packaging code	QLCC
package instruction	QCCN, LCC28,.35X.55
Contacts	28
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-CQCC-N28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	4
Humidity sensitivity level	3
Number of functions	1
Number of terminals	28
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX4
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Encapsulate equivalent code	LCC28,.35X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
power supply	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb) - hot dipped
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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5962-8868101XA Related Products

	5962-8868101XA	5962-8868106XA	5962-8868105XA	5962-8868105LA	5962-8868106LA
Description	Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28	Standard SRAM, 64KX4, 20ns, CMOS, CQCC28	Standard SRAM, 64KX4, 25ns, CMOS, CQCC28	Standard SRAM, 64KX4, 25ns, CMOS, CDIP24	Standard SRAM, 64KX4, 20ns, CMOS, CDIP24
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	QCCN, LCC28,.35X.55	QCCN, LCC28,.35X.55	QCCN, LCC28,.35X.55	DIP, DIP24,.3	DIP, DIP24,.3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	35 ns	20 ns	25 ns	25 ns	20 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-CQCC-N28	R-CQCC-N28	R-CQCC-N28	R-GDIP-T24	R-GDIP-T24
JESD-609 code	e0	e0	e0	e0	e0
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4	4	4
Humidity sensitivity level	3	3	3	3	3
Number of functions	1	1	1	1	1
Number of terminals	28	28	28	24	24
word count	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	64KX4	64KX4	64KX4	64KX4	64KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	QCCN	QCCN	QCCN	DIP	DIP
Encapsulate equivalent code	LCC28,.35X.55	LCC28,.35X.55	LCC28,.35X.55	DIP24,.3	DIP24,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	225	225	225	225	225
power supply	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-STD-883	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B
Maximum standby current	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.12 mA	0.15 mA	0.14 mA	0.14 mA	0.15 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb) - hot dipped	Tin/Lead (Sn/Pb) - hot dipped	Tin/Lead (Sn/Pb) - hot dipped	Tin/Lead (Sn/Pb) - hot dipped	Tin/Lead (Sn/Pb) - hot dipped
Terminal form	NO LEAD	NO LEAD	NO LEAD	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	2.54 mm	2.54 mm
Terminal location	QUAD	QUAD	QUAD	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1
Maker	LOGIC Devices	LOGIC Devices	LOGIC Devices	LOGIC Devices	-
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	Contains lead
Other features	-	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY	TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY
Maximum seat height	-	3.048 mm	3.048 mm	5.08 mm	5.08 mm
width	-	8.89 mm	8.89 mm	7.62 mm	7.62 mm

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