DISCRETE SEMICONDUCTORS
DATA SHEET
M3D737
BGF1901-10
GSM1900 EDGE power module
Product specification
Supersedes data of 2003 Nov 17
2004 Oct 11
Philips Semiconductors
Product specification
GSM1900 EDGE power module
FEATURES
•
Typical GSM EDGE performance at a supply voltage of
26 V:
– Output power = 3.5 W
– Gain = 26.5 dB
– Efficiency = 19 %
– ACPR <
−63
dBc at 400 kHz
– rms EVM < 1.2 %
– peak EVM < 3.6 %.
•
Low distortion to a CDMA signal
•
Excellent 2-tone performance
•
Low die temperature due to copper flange
•
Integrated temperature compensated bias
•
50
Ω
input/output system
•
Flat gain over frequency band.
APPLICATIONS
•
Base station RF power amplifiers in the
1930 to 1990 MHz frequency range
•
GSM, GSM EDGE, multi carrier applications
•
Macrocell (driver stage) and Microcell (final stage).
DESCRIPTION
10 W LDMOS power amplifier module for base station
amplifier applications in the 1930 to 1990 MHz band.
QUICK REFERENCE DATA
Typical RF performance at T
mb
= 25
°C;
Z
S
= Z
L
= 50
Ω.
MODE OF OPERATION
CW
GSM EDGE
Note
1. ACPR 400 kHz at 30 kHz resolution bandwidth.
f
(MHz)
1930 to 1990
1930 to 1990
V
S
(V)
26
26
P
L
(W)
10
3.5
G
p
(dB)
25.5
26.5
η
(%)
34
19
Top view
1
BGF1901-10
PINNING - SOT365C
PIN
1
2
3
Flange
RF input
V
S
RF output
ground
DESCRIPTION
23
MBL257
Fig.1 Simplified outline.
ACPR
(dBc)
−
−63
(1)
rms EVM
(%)
−
1.2
2004 Oct 11
2
Philips Semiconductors
Product specification
GSM1900 EDGE power module
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BGF1901-10
−
DESCRIPTION
BGF1901-10
VERSION
SOT365C
plastic rectangular single-ended flat package; flange mounted;
2 mounting holes; 3 in-line leads
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
S
P
D
P
L
T
stg
T
mb
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
PARAMETER
−
−
−
−30
−20
MIN.
30
100
15
+100
+85
MAX.
V
mW
W
°C
°C
UNIT
CHARACTERISTICS
T
mb
= 25
°C;
V
S
= 26 V; P
L
= 6 W; f = 1930 to 1990 MHz; Z
S
= Z
L
= 50
Ω;
unless otherwise specified.
SYMBOL
CW mode
I
DQ
P
1dB
G
p
∆G
p(freq)
∆G
p(pwr)
G
OB
η
VSWR
in
H
2
H
3
quiescent current (pin 2)
load power
power gain
gain flatness over frequency
range
gain flatness over power band
out of band gain
efficiency
input VSWR
second harmonic
third harmonic
P
L
= 50 mW up to 5 W
P
D
= 0 mW
at 1 dB gain compression
220
7
24
−
−1
255
10
26.5
0.7
0
−
25
1.4 : 1
−58
−59
−37
−63
1.2
3.6
280
−
30
2
+1
G
Pi max
+ 2;
note 1
−
2:1
−50
−53
−32
−60
2.5
8
dBc
dBc
mA
W
dB
dB
dB
dB
%
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
small signal, P
D
= 0 dBm;
−
1930 MHz > f > 1990 MHz
22
−
−
−
−
−
−
−
GSM EDGE mode
(P
L
= 3.5 W average)
SR200
SR400
EVM
rms
EVM
M
Notes
1. G
Pi
is small signal in-band gain.
2. As defined by ETSI.
spectral regrowth; EDGE GSM 200 kHz; note 2
signal
400 kHz
rms EDGE signal distortion
peak EDGE signal distortion
dBc
dBc
%
%
2004 Oct 11
3
Philips Semiconductors
Product specification
GSM1900 EDGE power module
BGF1901-10
handbook, halfpage
27
MLE249
30
η
η
(%)
20
Gp
handbook, halfpage
−60
MLE250
Gp
(dB)
26
ACPR
(dBc)
−62
−64
25
10
−66
24
0
2
4
6
8
PL (AV) (W)
0
−68
0
2
4
6
8
PL (AV) (W)
f = 1960 MHz.
f = 1960 MHz.
Fig.2
GSM EDGE power gain and efficiency as
functions of load power; typical values.
Fig.3
GSM EDGE ACPR at 400 kHz as a function
of load power; typical values.
handbook, halfpage
2.5
MLE251
handbook, halfpage
8
MLE252
EVMrms
(%)
2
EVMM
(%)
6
1.5
4
1
2
0.5
0
0
2
4
8
6
PL (AV) (W)
0
0
2
4
6
8
PL (AV) (W)
f = 1960 MHz.
f = 1960 MHz.
Fig.4
GSM EDGE rms EVM as a function of
average load power; typical values.
Fig.5
GSM EDGE peak EVM as function of
average load power; typical values.
2004 Oct 11
4
Philips Semiconductors
Product specification
GSM1900 EDGE power module
BGF1901-10
26.6
handbook, halfpage
Gp
(dB)
26.2
η
MLE253
50
η
(%)
40
handbook, halfpage
26.4
Gp
(dB)
26
MLE254
35
η
η
(%)
25
Gp
25.8
Gp
25.4
30
20
25.6
15
25
10
24.6
0
5
10
PL (W)
0
15
25.2
0
2
4
6
8
PL (AV) (W)
5
f = 1960 MHz.
f
1
= 1960 MHz; f
2
= 1960.2 MHz.
Fig.6
CW gain power and efficiency as functions
of load power; typical values.
Fig.7
Two tone gain power and efficiency as
functions of load power; typical values.
handbook, halfpage
−20
MLE255
dim
handbook, halfpage
28
MLE256
0
s11
(dB)
−10
(dBc)
−30
d3
d5
s21
(dB)
24
s21
−40
s11
−50
s11
d7
20
−20
−60
−70
0
2
4
6
8
PL (AV) (W)
16
1.81
1.87
1.93
1.99
−30
2.11
2.05
f (GHz)
f
1
= 1960 MHz; f
2
= 1960.2 MHz.
Fig.8
Two tone intermodulation distortion as a
function of average load power; typical
values.
Fig.9 s-parameters as a function of frequency.
2004 Oct 11
5
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