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3SK191NI-UL

Description
Small Signal Field-Effect Transistor, 0.08A I(D), 12V, 1-Element, N-Channel, Gallium Arsenide, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size145KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

3SK191NI-UL Overview

Small Signal Field-Effect Transistor, 0.08A I(D), 12V, 1-Element, N-Channel, Gallium Arsenide, Metal-oxide Semiconductor FET

3SK191NI-UL Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage12 V
Maximum drain current (ID)0.08 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
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