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1N5690AB

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 45V, Silicon, Abrupt, DO-7, DO-7, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size68KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

1N5690AB Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 39pF C(T), 45V, Silicon, Abrupt, DO-7, DO-7, 2 PIN

1N5690AB Parametric

Parameter NameAttribute value
Parts packaging codeDO-7
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresSUPER Q
Minimum breakdown voltage45 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio3.3
Nominal diode capacitance39 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor450
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
Base Number Matches1

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Index Files: 2683  1968  903  2915  1995  55  40  19  59  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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