MB85RS128APNF-G-JNE1 datasheet, PDF

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MB85RS128APNF-G-JNE1: DescriptionMemory Circuit, 16KX8, CMOS, PDSO8, 3.90 X 5.05 MM, 1.27 MM PITCH, 1.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, SOP-8; Categorystorage storage; File Size1MB，32 Pages; ManufacturerCypress Semiconductor

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MB85RS128APNF-G-JNE1 Overview

Memory Circuit, 16KX8, CMOS, PDSO8, 3.90 X 5.05 MM, 1.27 MM PITCH, 1.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, SOP-8

MB85RS128APNF-G-JNE1 Parametric

Parameter Name	Attribute value
package instruction	SOP,
Reach Compliance Code	unknown
JESD-30 code	R-PDSO-G8
length	5.05 mm
memory density	131072 bit
Memory IC Type	MEMORY CIRCUIT
memory width	8
Number of functions	1
Number of terminals	8
word count	16384 words
character code	16000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16KX8
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum seat height	1.75 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	3.9 mm
Base Number Matches	1

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FUJITSU SEMICONDUCTOR

DATA SHEET

DS501-00008-6v0-E

Memory FRAM

128K (16 K

8) Bit SPI

MB85RS128A

■

DESCRIPTION

MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384

words

8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

MB85RS128A adopts the Serial Peripheral Interface (SPI).

The MB85RS128A is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS128A can be used for 10

read/write operations, which is a significant

improvement over the number of read and write operations supported by Flash memory and E

PROM.

MB85RS128A does not take long time to write data like Flash memories or E

PROM, and MB85RS128A

takes no wait time.

■

FEATURES

• Bit configuration

• Serial Peripheral Interface

•

: 16,384 words

8 bits

: SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

Operating frequency

: 25 MHz (Max)

High endurance

: 10

times / byte

Data retention

: 10 years (+55

°C),

55 years (+35

°C)

Operating power supply voltage : 3.0 V to 3.6 V

Low power consumption

: Operating power supply current 5 mA (Typ @25 MHz)

Standby current 9

μA

(Typ)

Operation ambient temperature range :

−

°C

Package

: 8-pin plastic SOP (FPT-8P-M02)

RoHS compliant

2013.9

MB85RS128APNF-G-JNE1 Related Products

	MB85RS128APNF-G-JNE1	MB85RS128APNF-G-JNERE1
Description	Memory Circuit, 16KX8, CMOS, PDSO8, 3.90 X 5.05 MM, 1.27 MM PITCH, 1.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, SOP-8	Memory Circuit, 16KX8, CMOS, PDSO8, 3.90 X 5.05 MM, 1.27 MM PITCH, 1.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, SOP-8
package instruction	SOP,	SOP,
Reach Compliance Code	unknown	unknown
JESD-30 code	R-PDSO-G8	R-PDSO-G8
length	5.05 mm	5.05 mm
memory density	131072 bit	131072 bit
Memory IC Type	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	8	8
Number of functions	1	1
Number of terminals	8	8
word count	16384 words	16384 words
character code	16000	16000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C
organize	16KX8	16KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOP	SOP
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Maximum seat height	1.75 mm	1.75 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL
width	3.9 mm	3.9 mm
Base Number Matches	1	1

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