INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUT54
DESCRIPTION
·High
Voltage
·High
Speed Switching
·High
Power Dissipation
APPLICATIONS
·Designed
for switching mode power supply and electronic
ballast applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CES
V
CER
V
CEO
V
EBO
I
C
I
CM
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
R
BE
≤100Ω
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
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w
w
VALUE
800
UNIT
V
800
V
430
6
V
V
8
A
10
4
100
150
-55~150
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BUT54
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 0.1A; I
B
= 0, L= 125mH
I
C
= 0.5mA; I
B
= 0, R
BE
≤100Ω
B
430
V
V
(BR)CER
Collector-Emitter Breakdown Voltage
800
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
6
V
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.8A
B
5.0
V
V
BE(
sat
)
I
CES
Base-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.8A
B
2.0
1.0
2.0
45
V
Collector Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current-Gain—Bandwidth Product
Switching Times ;Resistive Load
t
off
Turn-off Time
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w
V
CE
= 800V; V
BE
= 0
V
CE
= 800V; V
BE
= 0; T
C
=150℃
I
C
= 1A; V
CE
= 5V
20
I
C
= 4A; V
CE
= 5V
5.5
I
C
= 0.5A; V
CE
= 10V
I
C
=4A; I
B1
=-I
B2
=1.25A; t
p
=20μs
mA
10
MHz
4.0
μs
t
f
Fall Time
1.0
μs
isc Website：www.iscsemi.cn
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