M383L2828CT1-LA0 datasheet, PDF

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M383L2828CT1-LA0: DescriptionDDR DRAM Module, 128MX72, 0.8ns, CMOS, DIMM-184; Categorystorage storage; File Size96KB，13 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M383L2828CT1-LA0 Overview

DDR DRAM Module, 128MX72, 0.8ns, CMOS, DIMM-184

M383L2828CT1-LA0 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIMM
package instruction	DIMM, DIMM184
Contacts	184
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.8 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	9663676416 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	184
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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M383L2828CT1

184pin Registered DDR SDRAM MODULE

1GB DDR SDRAM MODULE

(128Mx72 ((64Mx72)*2)based on 64Mx4 DDR SDRAM)

Registered 184pin DIMM

72-bit ECC/Parity

Revision 0.1

Dec. 2001

- -1 -

Rev. 0.1 Dec. 2001

M383L2828CT1-LA0 Related Products

	M383L2828CT1-LA0	M383L2828CT1-CA0	M383L2828CT1-CA2	M383L2828CT1-LB0	M383L2828CT1-CB0	M383L2828CT1-LA2
Description	DDR DRAM Module, 128MX72, 0.8ns, CMOS, DIMM-184	DDR DRAM Module, 128MX72, 0.8ns, CMOS, DIMM-184	DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184	DDR DRAM Module, 128MX72, 0.75ns, CMOS, DIMM-184
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184	DIMM, DIMM184
Contacts	184	184	184	184	184	184
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.8 ns	0.8 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz	133 MHz	133 MHz	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
memory density	9663676416 bit	9663676416 bit	9663676416 bit	9663676416 bit	9663676416 bit	9663676416 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	72	72	72	72	72	72
Humidity sensitivity level	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	184	184	184	184	184	184
word count	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words
character code	128000000	128000000	128000000	128000000	128000000	128000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128MX72	128MX72	128MX72	128MX72	128MX72	128MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184	DIMM184
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192
self refresh	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	-	-

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