FLU35ZM
FEATURES
・High
Output Power: P1dB=35.5dBm(typ.)
・High
Gain: G1dB=11.5dB(typ.)
・Low
Cost Plastic(SMT) Package
・Tape
and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35ZM is a GaAs FET designed for base station and CPE
application up to a 4.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Item
DC Input Voltage
Channel Temperature
Forward Gate Current
Reverse Gate Current
Gate Resistance
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Rating
15
-5
20.8
-55 to +150
175
Unit
V
V
W
o
o
C
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Symbol
V
DS
T
ch
I
gsf
I
gsr
R
g
Condition
Unit
V
o
≤
10
≤
145
≤
19.4
≥
-2.0
100
C
mA
mA
Ω
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown
Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Thermal Resistance
Symbol
I
DSS
gm
V
p
V
GSO
P
1dB
G
1dB
R
th
Test Conditions
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=800mA
V
DS
=5V, I
DS
=60mA
I
GS
=-60uA
V
DS
=10V
f=2.0GHz
I
DS
=0.6I
DSS
(Typ.)
Channel to Case
Min.
-
-
-1.0
-5
34.5
10.5
-
Limit
Typ.
1200
600
-2.0
-
35.5
11.5
5
Max.
1800
-
-3.5
-
-
-
6
o
Unit
mA
mS
V
V
dBm
dB
C /W
CASE STYLE: ZM
Note1: Product supplied to this specification are 100% DC performance tested.
Note2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class
Ⅲ
2000 V½
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kΩ)
Edition 1.2
Jan 2004
G.C.P.:Gain Compression Point
1
FLU35ZM
L-Band Medium & High Power GaAs FET
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
f=2.0GHz VDS=10V IDS=0.6IDSS
40
100
POWER DERATING CURVE
25
Total Pow e r Dis s ipatio [W]
20
38
Output Power [dB m]
36
34
32
30
28
26
24
40
80
Power Added Efficiency [% ]
15
10
5
0
0
50
100
150
200
Pout
60
ηadd
20
22
20
10
12
14
16
18
20
22
24
26
28
0
Case Temperature[
℃
]
dBm
）
Input Power
（
SMALL SIGNAL R.L. vs FREQUENCY
Wid e Ban d Tu ning (1.8GHz
½
2.2GHz )
15
10
Sm all Sign al R.L. &
5
Is o lation [d B]
0
-5
-10
-15
-20
-25
-30
-35
1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
3.2
14
10
8
6
4
2
0
-2
-4
-6
Sm all Sig nal Gain [dB]
12
Fr e q. [GHz ]
S11
S12
S22
S21
2
FLU35ZM
L-Band Medium & High Power GaAs FET
■
S-PARAMETER
+90°
+50 j
+2 5j
10
Ω
25
Ω
+100 j
+1 0j
3.
0
50
Ω
100
Ω
3.
0
2.
0
1. H z
0G
+250 j
1.0GH z
0
2.
0
1. H z
0G
∞
± 180° 20
10
Scale for |S
21
|
2.0
3.0
0°
-1 0j
-25 0j
0.4
-25 j
-50j
-10 0j
S 11
S 22
0.6
-90°
Scale for |S
12
|
S 12
S 21
VDS=10V, IDS=0.6IDSS(TYP.)
Freq
[GHz]
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
S11
MAG
0.92
0.92
0.92
0.92
0.92
0.89
0.90
0.91
0.93
0.93
ANG
-157.14
-171.65
-178.09
175.59
168.62
159.87
150.98
143.89
137.22
133.89
S21
MAG
4.75
2.45
1.69
1.32
1.08
0.90
0.76
0.64
0.54
0.45
ANG
94.86
81.26
70.63
61.24
50.14
39.03
27.30
16.94
6.74
-1.01
S12
MAG
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
ANG
14.31
9.28
7.87
11.56
10.17
16.31
13.26
14.12
7.95
9.18
S22
MAG
0.67
0.67
0.66
0.67
0.67
0.69
0.71
0.74
0.77
0.78
ANG
-172.46
-175.16
-176.48
-178.45
178.10
173.63
167.99
162.05
156.46
151.30
3
FLU35ZM
L-Band Medium & High Power GaAs FET
OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER
@ VDS=10V, IDS(DC)=0.6IDSS
Pin-Pout @f=1.8GHz
40
35
30
25
20
15
6 8 10 12 14 16 18 20 22 24 26 28 30
Input Pow e r [dBm ]
Pout
Ids [m A]
P.A.E.
Pout
Pin-Pout @ f=2.0GHz
700
650
600
550
500
450
40
700
650
600
550
500
450
6
8 10 12 14 16 18 20 22 24 26 28 30
Input Pow e r [dBm ]
Ids [m A]
P.A.E.
Outpu t Pow e r [dBm ]
Dr ain Cur r e nt [m A]
Outp u t Po w e r [d Bm ]
75
Power Added Efficiency[%]
Dr ain Cu r r e n t [m A]
35
30
25
20
15
75
Power Added Efficiency[%]
50
50
25
25
0
0
Pin-Pout @f=2.2GHz
40
700
OUTPUT POWER vs. FREQUENCY
40
Outpu t Pow e r [d Bm ]
75
Power Added Efficiency[%]
Output Pow e r [dBm ]
Drain Curre nt [m A]
35
30
650
600
35
30
25
20
15
1.7
1.9
2.1
2.3
50
25
20
550
500
25
15
6
8 10 12 14 16 18 20 22 24 26 28 30
Input Power [dBm]
Pout
Ids[mA]
P.A.E.
450
0
Fr e que ncy [GHz]
Pin=10dBm
Pin=25dBm
Pin=15dBm
Pin=28dBm
Pin=20dBm
P1dB
4
FLU35ZM
L-Band Medium & High Power GaAs FET
@ VDS=10V, IDS(DC)=0.6IDSS
IMD vs OUTPUT POWER(2-tone)
0
-10
-20
W-CDMA 2-CARRIER IMD(ACLR)
*fo=2.1325GHz *f1=2.1475GHz
-25
-30
ACL R(IM D) [dBc]
-35
-40
-45
-50
-55
IM D [dBc]
-30
-40
-50
-60
-70
-80
15
20
25
30
35
-60
17
19
21
23
25
27
29
31
2-tone to tal Pout [dBm ] @ df=+5M Hz
IM 3@ 1.8GHz
IM 5@ 2.0GHz
IM 5@ 1.8GHz
IM 3@ 2.2GHz
IM 3@ 2.0GHz
IM 5@ 2.2GHz
2-ton e total Pou t [dBm ]
IM 3-L
IM 3-U
IM 5-L
IM 5-U
W-CDMA SINGLE CARRIER ACLR
*fo=2.1325GHz
-25
-30
-35
W-CDMA SINGLE CARRIER CCDF AND GAIN
*fo=2.1325GHz
15
14
13
CCDF,Gain [dB]
12
11
10
9
8
7
6
5
18
23
28
ACL R [dBc]
-40
-45
-50
-55
-60
-65
-70
23
24
25
26
27
28
29
30
31
32
Output Pow e r [dBm ]
-5M Hz
+5M Hz
-10M Hz
+10M Hz
Output Pow e r [dBm ]
0.01%
Pe ak
Gain
Note : *All signal are W-CDMA modulation at 3GPP3.4.12-00 BS-1 64ch non clipping.
5
PCB Design
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