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IRHNJ593034CM

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size196KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHNJ593034CM Overview

Power Field-Effect Transistor

IRHNJ593034CM Parametric

Parameter NameAttribute value
MakerInternational Rectifier ( Infineon )
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
PD-96911A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
IRHNJ597034CM
IRHNJ593034CM
Radiation Level R
DS(on)
100K Rads (Si)
0.08Ω
300K Rads (Si) 0.08Ω
I
D
-20A
-20A
IRHYS597034CM
JANSR2N7520T3
60V, P-CHANNEL
REF: MIL-PRF-19500/732
5

TECHNOLOGY
™
QPL Part Number
JANSR2N7520T3
JANSF2N7520T3
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low-Ohmic
TO-257AA
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
n
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-20
-13
-80
75
0.6
±20
134
-20
7.5
-4.9
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
www.irf.com
1
02/11/15

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Reach Compliance Code unknown unknown
Base Number Matches 1 1
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