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BUK7675-55T/R

Description
TRANSISTOR 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size56KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BUK7675-55T/R Overview

TRANSISTOR 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

BUK7675-55T/R Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)30 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)19.7 A
Maximum drain-source on-resistance0.075 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)85 pF
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment61 W
Maximum pulsed drain current (IDM)79 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)45 ns
Maximum opening time (tons)35 ns
Base Number Matches1
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting. Using
’trench’ technology the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
purpose
switching
applications.
BUK7675-55
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
55
19.7
61
175
75
UNIT
V
A
W
˚C
mΩ
PINNING - SOT404
PIN
1
2
3
mb
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2
1
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
16
19.7
13.9
79
61
175
UNIT
V
V
V
A
A
A
W
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
Minimum footprint, FR4
board
TYP.
-
50
MAX.
2.46
-
UNIT
K/W
K/W
April 1998
1
Rev 1.100

BUK7675-55T/R Related Products

BUK7675-55T/R BUK7675-55 BUK7675-55/T3
Description TRANSISTOR 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power TRANSISTOR 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, 3 PIN, FET General Purpose Power TRANSISTOR 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 30 mJ 30 mJ 30 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V
Maximum drain current (ID) 19.7 A 19.7 A 19.7 A
Maximum drain-source on-resistance 0.075 Ω 0.075 Ω 0.075 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 85 pF 85 pF 85 pF
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Number of components 1 1 1
Number of terminals 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 61 W 61 W 61 W
Maximum pulsed drain current (IDM) 79 A 79 A 79 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maximum off time (toff) 45 ns 45 ns 45 ns
Maximum opening time (tons) 35 ns 35 ns 35 ns
Base Number Matches 1 1 1
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