1PMT5913Be3 thru 1PMT5956Be3
POWERMITE
TM
3.0 WATT Zener Diodes
SCOTTSDALE DIVISION
DESCRIPTION
This surface mountable 3.0 W Zener diode series in the JEDEC DO-216
package is similar in electrical features to the JEDEC registered 1N5913B
thru 1N5956B axial-leaded package for 3.3 to 200 V. It is an ideal selection
for applications requiring low profile and high-density mounting that are also
RoHS Compliant. When properly heat sunk, these zener diodes provide
power-handling capabilities only found in larger packages. In addition to its
size advantages, Powermite
®
package features include a full metallic
bottom that eliminates the possibility of solder flux entrapment during
assembly, and a unique locking tab acts as an integral heat sink. Its
innovative design makes this device ideal for use with automatic insertion
equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-216
FEATURES
•
•
•
•
•
•
•
•
Very low profile surface mount package (1.1 mm)
Integral Heat Sink Locking Tabs
Compatible with automatic insertion equipment
Full metallic bottom eliminates flux entrapment
RoHS Compliant
Zener voltage 3.3 to 200 Volts
Low reverse leakage
Tight tolerance available
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Wide selection from 3.3 to 200 V
Flexible axial-lead mounting terminals
Nonsensitive to ESD
Moisture classification is Level 1 per IPC/JEDEC
J-STD-020B with no dry pack required
ESD Rating of >16kV per human body model
MAXIMUM RATINGS
•
•
•
•
Junction and storage temperatures: -55°C to +150°C
DC power dissipation: 3.0 watt with case bottom (TAB
1)
≤
60°C (also see derating in Figure 1).
Forward voltage @200 mA: 1.2 volts (maximum)
Thermal Resistance: 30
º
C/W junction to Case bottom
(Tab 1), or 230
º
C/W junction to ambient when mounted
on FR4 PC board (1 oz Cu) with recommended
footprint (see last page).
Steady-State Power: 3.0 watts at T
C
< 60
o
C, or 0.54
º
watts at T
A
= 25 C when mounted on FR4 PC board
and recommended footprint as described for thermal
resistance (see Figure 1 and last page)
Solder Temperatures: 260
º
C for 10 s (max)
•
•
•
•
•
•
MECHANICAL AND PACKAGING
Terminals: Annealed matte-Tin plating over copper
and readily solderable per MIL-STD-750 method 2026
(consult factory for Tin-Lead plating)
Polarity: Cathode designated by TAB 1 (backside)
Case: Molded epoxy package meets UL94V-0
Marking: Last three numerical digits of part number
(see device marking code in Electrical Characteristics
table below with dot “•” suffix for RoHS Compliant)
Weight: 0.016 gram (approximate)
Tape & Reel option: Standard per EIA-481-B
7 inch reel 3,000 pieces
13 inch reel 12,000 pieces
•
•
ELECTRICAL CHARACTERISTICS @ T
L
= 30
o
C
1PMT5913B thru
1PMT5956B
Microsemi
Number
1PMT5913B
1PMT5914B
1PMT5915B
1PMT5916B
1PMT5917B
1PMT5918B
1PMT5919B
1PMT5920B
Device
Marking
(4)
913•
914•
915•
916•
917•
918•
919•
920•
Zener
Voltage
V
Z
(1)
VOLTS
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
Test
Current
I
ZT
mA
113.6
104.2
96.1
87.2
79.8
73.5
66.9
60.5
Dynamic
Impedance
Z
ZT
(2)
OHMS
10
9.0
7.5
6.0
5.0
4.0
2.0
2.0
Knee
Current
I
ZK
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Knee
Impedance
Z
ZK
OHMS
500
500
500
500
500
350
250
200
Maximum
Reverse
Current
I
R
μAdc
100
75
25
5
5
5
5
5
Reverse
Voltage
V
R
VOLTS
1.0
1.0
1.0
1.0
1.5
2.0
3.0
4.0
Maximum
Zener
Current
I
ZM
(3)
mA
749.1
686.4
633.6
547.2
526.4
481.8
432.3
397.7
Copyright
©
2005
6-19-2005 REV H
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1PMT5913Be3 thru 1PMT5956Be3
POWERMITE
TM
3.0 WATT Zener Diodes
SCOTTSDALE DIVISION
Microsemi
Number
Device
Marking
Zener
Voltage
V
Z
(1)
Volts
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Test
Current
I
ZT
mA
55.1
50
45.7
41.2
37.5
34.1
31.2
28.8
25
23.4
20.8
18.7
17
15.6
13.9
12.5
8.0
7.3
6.7
6.0
5.5
5.0
4.6
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.1
1.9
Dynamic
Impedance
Z
ZT
(2)
Ohms
2.5
3.0
3.5
4.0
4.5
5.5
6.5
7.0
9.0
10
12
14
17.5
19
23
28
67
70
86
100
120
140
160
200
250
300
380
450
600
700
900
1200
Knee
Current
I
ZK
mA
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Knee
Impedance
Z
ZK
Ohms
200
400
400
500
500
550
550
550
600
600
650
650
650
700
700
750
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
Maximum
Reverse
Current
I
R
µA
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Reverse
Voltage
V
R
Volts
5.2
6.0
6.5
7.0
8.0
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
35.8
38.8
42.6
47.1
51.2
56
62.2
69.2
76
83.6
91.2
98.8
114
121.6
136.8
152
Maximum
Zener
Current
I
ZM
(3)
mA
363.0
330.0
300.3
270.6
247.5
224.4
206.2
189.8
165.0
153.5
137.0
123.8
112.2
102.3
90.8
82.5
51.2
47.9
42.9
38.6
36.3
33.0
29.7
26.4
24.8
21.5
19.8
18.1
16.5
14.9
13.2
11.6
WWW .
Microsemi
.C
OM
1PMT5921B
1PMT5922B
1PMT5923B
1PMT5924B
1PMT5925B
1PMT5926B
1PMT5927B
1PMT5928B
1PMT5929B
1PMT5930B
1PMT5931B
1PMT5932B
1PMT5933B
1PMT5934B
1PMT5935B
1PMT5936B
1PMT5941B
1PMT5942B
1PMT5943B
1PMT5944B
1PMT5945B
1PMT5946B
1PMT5947B
1PMT5948B
1PMT5949B
1PMT5950B
1PMT5951B
1PMT5952B
1PMT5953B
1PMT5954B
1PMT5955B
1PMT5956B
921•
922•
923•
924•
925•
926•
927•
928•
929•
930•
931•
932•
933•
934•
935•
936•
941•
942•
943•
944•
945•
946•
947•
948•
949•
950•
951•
952•
953•
954•
955•
956•
NOTE 1:
Product shown has a standard tolerance of
±5%
on the nominal zener voltage and is also available in 2% and 1%
tolerance with suffix C and D respectively. V
Z
is measured at I
ZT
with T
C
(TAB 1) 30°C and 20 seconds after application
of dc current.
NOTE 2:
Zener impedance is derived by superimposing on I
ZT
a 60 Hz rms ac current equal to 10% of I
ZT
.
NOTE 3:
Based upon 3 W maximum power dissipation. Allowance has been made for the higher voltage associated with operation
at higher currents and temperature. For determination of voltage change with current deviations from I
ZT
see Micro Note
202.
GRAPHS AND CIRCUIT
P
d
Rated Power Dissipation (mW)
1PMT5913B thru
913B
1PMT5956B
CIRCUIT DIAGRAM
T
C
Case (TAB 1) Temperature (ºC)
FIGURE 1
Copyright
©
2005
6-19-2005 REV H
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Embedded System
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