1P643........1P648
1 Amp. Fast Recovery Silicon Diodes
Dimensions in mm.
DO-15
(Plastic)
Voltage
50 to 500 V.
Current
1.0 A. at 45°C.
•
Fast Recovery Diodes
6.35
± 0.2
58.5 min.
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 350°C.
3. Max. soldering time, 3,5 sec.
4. Do not bend lead at a point closer than
2 mm. to the body.
•
Diffused junction
•
High current capability
•
The plastic material carries
U/L recognition 94 V-0
•
Terminals: Axial Leads
•
Polarity: Color band denotes cathode
Maximum Ratings, according to IEC publication No. 134
1P643
1P644
100
1P645
225
1P646
300
1P647
400
1P648
500
V
RRM
I
F(AV)
I
FRM
I
FSM
t
rr
T
j
T
stg
Peak recurrent and non recurrent reverse voltage (V)
Forward current, R load at Tamb = 45 °C
Recurrent peak forward current
8.3 ms. peak forward surge current
(Jedec method)
50
1A
5A
35 A
250 ns
– 65 to + 125 °C
– 65 to + 125 °C
Max. reverse recovery
time from
I
F
= 0.5 A
I
R
= 1 A
I
RR
= 0.25 A
Operating temperature range
Storage temperature range
Electrical Characteristics at Tamb = 25°C
V
F
I
R
C
d
R
thj-a
Forward voltage drop at I
F
= 1 A
Reverse current at V
RRM
Typ. capacitance at 1 MHz
Max. thermal resistance (I = 10 mm.)
1.3 V
5µA
2 pF
60° C/W
1P640
Characteristic Curves
TYPICAL FORWARD CHARACTERISTICS
FORWARD CURRENT DERATING CURVE
1000
500
T
j
= 25°C
1.25
10 mm. - 10 mm.
1
0.8
0.75
0.50
R-Load
100
50
+ V
F
-
i
F
10
5
C-Load
1
0.5
0.25
0
0
0
0.4
0.8
1.2
1.6
Tamb, ambient temperature (°C)
V
F '
instantaneous forward voltage (V)
0
25
50
75 100 125 150 175
THERMAL RESISTANCE
TYPICAL JUNCTION CAPACITANCE
90
80
10
9
8
T
j
= 25 °C
f = 1MHz
60
7
6
5
40
4
3
20
I
I
2
1
0
0
10
20
30
35
0
1
10
100
1000
I, lead lenght (mm.)
V
R '
reverse voltage (V)