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BSZ086P03NS3EGXT

Description
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
CategoryDiscrete semiconductor    The transistor   
File Size549KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSZ086P03NS3EGXT Overview

Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

BSZ086P03NS3EGXT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, S-PDSO-N5
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time26 weeks
Other featuresESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)105 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)13.5 A
Maximum drain-source on-resistance0.0134 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-PDSO-N5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)160 A
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSZ086P03NS3E G
OptiMOS
TM
P3 Power-Transistor
Features
• single P-Channel in S3O8
• Qualified according JEDEC
1)
for target applications
• 150 °C operating temperature
V
GS
=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD protected
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
-30
8.6
-40
PG-TSDSON-8
V
A
Type
Package
Marking
086P3NE
Lead free
Yes
Halogen free
Yes
Packing
non-dry
BSZ086P03NS3E G PG-TSDSON-8
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=70 °C
T
A
=25 °C
2)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
I
D,pulse
E
AS
V
GS
P
tot
T
A
=25 °C
T
A
=25 °C
2)
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
1)
Value
-40
-40
-13.5
-160
105
±25
69
2.1
-55 … 150
Unit
A
T
C
=25 °C
3)
I
D
=-20 A,
R
GS
=25
Ω
mJ
V
W
T
j
,
T
stg
JESD22-A114 HBM
°C
3 (>= 4 kV)
260
55/150/56
°C
J-STD20 and JESD22
Rev. 2.03
page 1
2012-04-13

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