1N6373 thru 1N6389, e3
or MPTE-5 thru MPTE-45C, e3
SCOTTSDALE DIVISION
1500 WATT LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389
are JEDEC registered selections for both unidirectional and bidirectional
devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru
1N6389 are bi-directional where they all provide a very low specified
clamping factor for minimal clamping voltages (V
C
) above their respective
breakdown voltages (V
BR
) as specified herein. They are most often used
in protecting sensitive components from inductive switching transients or
induced secondary lightning effects as found in lower surge levels of
IEC61000-4-5 . They are also very successful in protecting airborne
avionics and electrical systems. Since their response time is virtually
instantaneous, they can also protect from ESD and EFT per IEC61000-4-2
and IEC61000-4-4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
CASE 1
FEATURES
•
•
•
Unidirectional and bidirectional TVS series for thru-hole
mounting
Suppresses transients up to 1500 watts @ 10/1000 µs
t
clamping
(0 volts to V
(BR)
min):
Unidirectional – Less than 100 pico seconds.
Bidirectional – Less than 5 nano seconds.
Working voltage (V
WM
) range 5 V to 45 V
Low clamping factor (ratio of actual V
C
/V
BR
): 1.33 @ full
rated power and 1.20 @ 50% rated power
Economical plastic encapsulated TVS for thru-hole mount
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are also available by
adding MQ, MX, or MV prefixes respectively to part
numbers, e.g. MX1N6373, etc.
Surface mount equivalent packages also available as
SMCJ6373 – SMCJ6389 (consult factory for other
surface mount options)
RoHS Compliant devices available by adding “e3” suffix
Metal package axial-leaded equivalents available in the
1N6373 – 1N6389 series (see separate data sheet)
APPLICATIONS / BENEFITS
•
Designed to protect Bipolar and MOS
Microprocessor based systems.
•
Protection from switching transients and induced RF
•
ESD & EFT protection per IEC 61000-4-2 and -4-4
•
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1, 2 & 3 1N6356 to 1N6372
Class 4: 1N6356 to 1N6362
•
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1 & 2: 1N6356 to 1N6372
Class 3: 1N6356 to 1N6362
Class 4: 1N6356 to 1N6358
•
Secondary lightning protection per IEC61000-4-5
with 2 Ohms source impedance:
Class 2: 1N6356 to 1N6361
Class 3: 1N6356 to 1N6358
•
•
•
•
•
•
•
MAXIMUM RATINGS
•
•
•
1500 Watts for 10/1000
μs
with repetition rate of 0.01% or
less* at lead temperature (T
L
) 25
o
C (See Figs. 1, 2, & 4)
o
o
Operating & Storage Temperatures: -65 to +150 C
Thermal Resistance: 22
º
C/W junction to lead at 3/8 inch
(10 mm) from body, or 82
º
C/W junction to ambient when
2
mounted on FR4 PC board with 4 mm copper pads (1oz)
and track width 1 mm, length 25 mm
Steady-State Power dissipation*: 5 watts at T
L
< 40
o
C, or
1.52 watts at T
A
= 25
º
C when mounted on FR4 PC board
described for thermal resistance
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
•
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
•
FINISH: Tin-Lead or RoHS Compliant annealed-
matte Tin plating solderable per MIL-STD-750
method 2026
•
POLARITY: Cathode indicated by band
•
MARKING: Part number and polarity diode symbol
•
WEIGHT: 1.5 grams. (Approx)
•
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
See “CASE 1” package dimension on last page
1N6373 thru 1N6389, e3
MPTE-5 thru MPTE-45C, e3
•
•
TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(V
WM
) except for transients that briefly drive the device into avalanche breakdown (V
BR
to V
C
region).
Copyright
©
2008
10-09-2008 REVD
*
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6373 thru 1N6389, e3
or MPTE-5 thru MPTE-45C, e3
SCOTTSDALE DIVISION
1500 WATT LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
ELECTRICAL CHARACTERISTICS @ 25
o
C (Unidirectional)
MAXIMUM
MINIMUM*
REVERSE
STAND-OFF
BREAKDOWN
LEAKAGE
VOLTAGE
VOLTAGE
@V
WM
(NOTE 1)
@ 1.0 mA
I
D
MICROSEMI
V
WM
V
(BR)
(min)
PART NUMBER
VOLTS
VOLTS
μA
1N6373
MPTE-5
5.0
300
6.0
1N6374
MPTE-8
8.0
25
9.4
1N6375
MPTE-10
10.0
2
11.7
1N6376
MPTE-12
12.0
2
14.1
1N6377
MPTE-15
15.0
2
17.6
1N6378
MPTE-18
18.0
2
21.2
1N6379
MPTE-22
22.0
2
25.9
1N6380
MPTE-36
36.0
2
42.4
1N6381
MPTE-45
45.0
2
52.9
V
F
at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum.
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
I
PP1
= 1A
V
C
VOLTS
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ I
PP2
= 10A
V
C
VOLTS
7.5
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
MAXIMUM
PEAK PULSE
CURRENT
I
PP3
A
160
100
90
70
60
50
40
23
19
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS @ 25
o
C (Bidirectional)
MPTE-5C
1N6382
MPTE-8C
1N6383
MPTE-10C
1N6384
MPTE-12C
1N6385
MPTE-15C
1N6386
MPTE-18C
1N6387
MPTE-22C
1N6388
MPTE-36C
1N6389
MPTE-45C
C Suffix indicates Bidirectional
5.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
300
25
2
2
2
2
2
2
2
6.0
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
7.1
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
7.5
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
160
100
90
70
60
50
40
23
19
NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (V
WM
) which should be equal to or greater than the dc or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
GRAPHS
1N6373 thru 1N6389, e3
MPTE-5 thru MPTE-45C, e3
FIGURE 1
Peak Pulse Power vs. Pulse Time
Copyright
©
2008
10-09-2008 REVD
FIGURE 2
Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
NXP MCU
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