ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386
Vishay Semiconductors
formerly General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
Case Style 1.5KE
ded ge
ten Ran
Ex e
Features
tag
Vol
Stand Off Voltage
5.0 to 18V
Peak Pulse Power
1500W
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 1500W peak pulse power capabililty with a 10/1000µs
waveform, repetition rate (duty cycle): 0.05%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• Ideal for data and bus line applications
• High temperature soldering guaranteed:
265
O
C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
• Includes 1N6373 thru 1N6386
0.375 (9.5)
0.285 (7.2)
Mechanical Data
Case:
Molded plastic body over passivated junction
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
For unidirectional types the color band
denotes the cathode, which is positive with respect
to the anode under normal TVS operation
Mounting Position:
Any
Weight:
0.045 oz., 1.2 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 1.4K per 13" paper Reel
(52mm horiz. tape), 4.2K/carton
73 – 1K per horiz. tape & Ammo box, 10K/carton
A
1.0 (25.4)
MIN.
0.042 (1.07)
0.038 (0.96)
DIA.
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
Parameter
Peak pulse power dissipation
with a 10/1000µs waveform
(1)
(Fig. 1)
Peak pulse current wih a 10/1000µs waveform
(1)
(Fig. 3)
Steady state power dissipation,
T
L
= 75
O
C, at lead lengths 0.375” (9.5mm)
Peak forward surge current, 8.3ms single half sine-wave
unidirectional only
(2)
Maximum instantaneous forward voltage
at 100A for unidirectional only
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
= 25°C unless otherwise noted)
Limit
Minimum 1500
See Table 1 & 2
6.5
200
3.5
–55 to +175
Unit
W
A
W
A
V
O
C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
(2) 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum
Document Number 88356
23-May-03
www.vishay.com
1
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(JEDEC Registered Data) Table 1 – Unidirectional Types
Ratings at 25°C ambient temperature unless otherwise specified.
JEDEC
Type
Number
General
Semiconductor
Part
Number
Stand-Off
Voltage
V
WM
(V)
Minimum
(3)
Breakdown
Voltage
at 1.0mA
V(
BR
)
(V)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
Maximum
Clamping
Voltage
at l
PP
= 1.0A
Vc
(V)
Maximum
Clamping
Voltage
at l
PP
= 10A
Vc
(V)
Maximum
Peak
Pulse
Current
I
PP
(A)
1N6373
(2)
1N6374
1N6375
1N6376
1N6377
1N6378
ICTE-5
(2)
ICTE-8
ICTE-10
ICTE-12
ICTE-15
ICTE-18
5.0
8.0
10.0
12.0
15.0
18.0
6.0
9.4
11.7
14.1
17.6
21.2
300
25.0
2.0
2.0
2.0
2.0
7.1
11.3
13.7
16.1
20.1
24.2
7.5
11.5
14.1
16.5
20.6
25.2
160
100
90
70
60
50
Electrical Characteristics
(JEDEC Registered Data) Table 2 – Bidirectional Types
Ratings at 25°C ambient temperature unless otherwise specified.
JEDEC
Type
Number
General
Semiconductor
Part
Number
Stand-Off
Voltage
V
WM
(V)
Minimum
(3)
Breakdown
Voltage
at 1.0mA
V(
BR
)
(V)
Maximum
Reverse
Leakage
at V
WM
I
D
(µA)
Maximum
Clamping
Voltage
at l
PP
= 1.0A
Vc
(V)
Maximum
Clamping
Voltage
at l
PP
= 10A
Vc
(V)
Maximum
Peak
Pulse
Current
I
PP
(A)
1N6382
1N6383
1N6384
1N6385
1N6386
ICTE-8C
ICTE-10C
ICTE-12C
ICTE-15C
ICTE-18C
8.0
10.0
12.0
15.0
18.0
9.4
11.7
14.1
17.6
21.2
50.0
2.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
24.8
11.6
14.5
17.1
21.4
25.5
100
90
70
60
50
Notes:
(1) “ C “ Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the ±1 Volt tolerance normally specified for power supply regulation on most integrated
circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter regulated power supply voltages
are employed.
(4) Clamping Factor: 1.33 at full rated power; 1.20 at 50% rated power; Clamping Factor: the ratio of the actual Vc (Clamping Voltage) to the V
(BR)
(Breakdown
Voltage) as measured on a specific device.
www.vishay.com
2
Document Number 88356
23-May-03
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 -- Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
P
PPM
-- Peak Pulse Power (kW)
100
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
100
Fig. 2 -- Pulse Derating Curve
75
1
50
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
25
td -- Pulse Width (sec.)
Fig. 3 -- Pulse Waveform
150
0
I
PPM
-- Peak Pulse Current,
% I
RSM
tr = 10µsec.
Peak Value
I
PPM
Half Value – I
PPM
2
100
T
J
= 25°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of I
PPM
100,000
0
25
50
75
100
125
150
175
200
T
A
-- Ambient Temperature (°C)
Fig. 4 -- Typical Junction Capacitance
Uni-Directional
C
J
-- Junction Capacitance (pF)
Measured at
Zero Bias
10,000
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
1000
Measured at
Stand-Off
Voltage, V
WM
50
10/1000µsec. Waveform
as defined by R.E.A.
td
0
0
1.0
2.0
3.0
4.0
t -- Time (ms)
Fig. 5 -- Typical Junction Capacitance
100,000
C
J
-- Junction Capacitance
(pF)
Measured at
Zero Bias
Bidirectional Type
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10,000
100
1.0
10
100
200
1,000
Measured at
Stand-Off
Voltage, V
WM
V
(BR)
-- Breakdown Voltage (V)
100
Fig. 6 -- Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
I
FSM
-- Peak Forward Surge Current (A)
100
200
200
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
1
10
V
(BR)
-- Breakdown Voltage (V)
Fig. 7 -- Typical Characteristics Clamping Voltage
I
PP
-- Peak Pulse Current (A)
50
Uni-Directional Only
T
A
= 25°C
100
50
10
ICTE-10
ICTE-12
ICTE-15
ICTE-18
ICTE-5
ICTE-8
1
6
8
10
12
14
16
18
20
22
24
26
28
10
1
5
10
50
100
V
C
-- Clamping Voltage (V)
Number of Cycles at 60 Hz
Document Number 88356
23-May-03
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
Microcontroller MCU
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